Patent Id | Score | Title | Patent Type | Publication Date | Priority Date | Family Id | Search Efficiency | Original Assignee | Current Assignee |
---|---|---|---|---|---|---|---|---|---|
EP0685851B1 | 1.038 | Control circuitry for shared data bus in a memory integrated circuit | GRANT | 1999-12-01 | 1994-05-31 | 22953113 | Great | STMicroelectronics lnc USA, SGS Thomson Microelectronics Inc | STMicroelectronics lnc USA |
EP1049104A1 | 1.034 | Technique for testing bitline and related circuitry of a memory array | GRANT | 2000-11-02 | 1999-04-30 | 23168431 | Great | STMicroelectronics lnc USA | STMicroelectronics lnc USA |
EP0465808B1 | 1.031 | Variable size set associative DRAM redundancy scheme | GRANT | 1998-07-29 | 1990-06-19 | 24153881 | Great | Texas Instruments Inc | Texas Instruments Inc |
EP1049103A1 | 0.986 | Techniue for testing wordline and related circuitry of a memory array | GRANT | 2000-11-02 | 1999-04-30 | 23168445 | Great | STMicroelectronics lnc USA | STMicroelectronics lnc USA |
EP1282133A1 | 0.979 | SEMICONDUCTOR MEMORY | GRANT | 2003-02-05 | 2000-03-08 | 27342611 | Great | NEC Corp | NEC Electronics Corp |
EP0820065A2 | 0.976 | Dynamic memory device with refresh circuit and refresh method | GRANT | 1998-01-21 | 1996-07-15 | 24744893 | Great | Motorola Inc | Motorola Solutions Inc |
EP1315176B1 | 0.973 | Memory circuit having parity cell array | GRANT | 2009-10-21 | 2001-11-22 | 26624665 | Great | Fujitsu Semiconductor Ltd | Fujitsu Semiconductor Ltd |
EP0239916A2 | 0.971 | Semiconductor memory device having a test mode and a standard mode of operation | GRANT | 1987-10-07 | 1986-03-24 | 13317874 | Great | NEC Corp | NEC Corp |
EP0017862A1 | 0.966 | Memory device | GRANT | 1980-10-29 | 1979-04-04 | 12587066 | Great | NEC Corp | NEC Corp |
US6469947B2 | 0.961 | Semiconductor memory device having regions with independent word lines alternately selected for refresh operation | GRANT | 2002-10-22 | 1999-06-29 | 26635622 | Great | Hyundai Electronics Co Ltd | SK Hynix Inc |
EP0060250A1 | 0.958 | CLOCKING SYSTEM FOR A SELF-REFRESHED DYNAMIC MEMORY | GRANT | 1982-09-22 | 1980-09-10 | 22154528 | Great | Mostek Corp | CTU of Delaware Inc |
US6166980A | 0.955 | Refresh controller in semiconductor memory | GRANT | 2000-12-26 | 1998-10-28 | 19555770 | Great | Hyundai Electronics Industries Co Ltd | SK Hynix Inc |
EP0469571B1 | 0.953 | Redundant semiconductor memory device | GRANT | 1997-11-12 | 1990-07-31 | 24239068 | Great | Texas Instruments Inc | Texas Instruments Inc |
US4079462A | 0.950 | Refreshing apparatus for MOS dynamic RAMs | GRANT | 1978-03-14 | 1976-05-07 | 24747874 | Great | Intel Corp | Intel Corp |
US6560155B1 | 0.948 | System and method for power saving memory refresh for dynamic random access memory devices after an extended interval | GRANT | 2003-05-06 | 2001-10-24 | 21702081 | Great | Micron Technology Inc | Micron Technology Inc |
US5442588A | 0.942 | Circuits and methods for refreshing a dual bank memory | GRANT | 1995-08-15 | 1994-08-16 | 23119101 | Great | Cirrus Logic Inc | Intellectual Ventures II LLC |
US6094389A | 0.938 | Semiconductor memory apparatus having refresh test circuit | GRANT | 2000-07-25 | 1999-03-27 | 19577991 | Great | Hyundai Microelectronics Co Ltd | Hyundai Microelectronics Co Ltd |
US5251178A | 0.932 | Low-power integrated circuit memory | GRANT | 1993-10-05 | 1991-03-06 | 24669913 | Great | Texas Instruments Inc | Texas Instruments Inc |
EP0166974A2 | 0.929 | Dynamic RAM | GRANT | 1986-01-08 | 1984-05-31 | 14572801 | Great | Toshiba Corp | Toshiba Corp |
EP0671745B1 | 0.928 | Semiconductor memory device | GRANT | 2001-06-06 | 1994-03-07 | 13190537 | Great | Hitachi Ltd | Hitachi Ltd |
EP0851427A2 | 0.928 | Memory system including an on-chip temperature sensor for regulating the refresh rate of a dram array | GRANT | 1998-07-01 | 1996-12-23 | 25118256 | Great | LSI Logic Corp | LSI Corp |
EP0511397B1 | 0.927 | SEMICONDUCTOR MEMORY HAVING HIGH-SPEED ADDRESS DECODER | GRANT | 1998-09-16 | 1990-11-16 | 18006786 | Great | Fujitsu VLSI Ltd, Fujitsu Ltd | Fujitsu VLSI Ltd, Fujitsu Ltd |
US6549483B2 | 0.926 | RAM having dynamically switchable access modes | GRANT | 2003-04-15 | 2001-03-30 | 25682474 | Great | Atmos Corp | Mosys Inc, Invensas LLC |
EP0676767B1 | 0.926 | Dram page copy method | GRANT | 2000-12-06 | 1994-04-11 | 22847288 | Great | Mosaid Technologies Inc | Mosaid Technologies Inc |
US5999481A | 0.923 | Method and apparatus for controlling the operation of an integrated circuit responsive to out-of-synchronism control signals | GRANT | 1999-12-07 | 1997-08-22 | 25440663 | Great | Micron Technology Inc | Micron Technology Inc |
EP0914659B1 | 0.917 | COMBINED PROGRAM AND DATA NONVOLATILE MEMORY WITH CONCURRENT PROGRAM-READ/DATA WRITE CAPABILITY | GRANT | 2005-01-12 | 1997-03-31 | 25254375 | Great | Atmel Corp | Atmel Corp |
US6549479B2 | 0.916 | Memory device and method having reduced-power self-refresh mode | GRANT | 2003-04-15 | 2001-06-29 | 25404851 | Great | Micron Technology Inc | Round Rock Research LLC |
EP0562605B1 | 0.915 | Dynamic random access memory device having addressing section and/or data transferring path arranged in pipeline architecture | GRANT | 1998-11-25 | 1992-03-26 | 13355248 | Great | NEC Corp | NEC Corp |
US6731560B2 | 0.911 | Refresh apparatus for semiconductor memory device and refresh method thereof | GRANT | 2004-05-04 | 2001-12-07 | 19716775 | Great | Hynix Semiconductor Inc | SK Hynix Inc |
US6256249B1 | 0.907 | Method for hidden DRAM refresh | GRANT | 2001-07-03 | 1999-12-30 | 26869537 | Great | Cypress Semiconductor Corp | Acacia Research Group LLC |
EP0212547A2 | 0.905 | method and device for refreshing dynamic semiconductor memory device | GRANT | 1987-03-04 | 1985-08-16 | 16062974 | Great | Fujitsu Ltd | Fujitsu Ltd |
EP0903747A2 | 0.899 | Apparatus and method for high-speed wordline driving with low area overhead | GRANT | 1999-03-24 | 1997-09-19 | 25463162 | Great | Siemens AG | Infineon Technologies AG |
EP0068893A2 | 0.893 | System for driving a dynamic random access memory device | GRANT | 1983-01-05 | 1981-06-29 | 14255767 | Great | Fujitsu Ltd | Fujitsu Ltd |
EP0771008B1 | 0.893 | A multiple-bank memory architecture and systems and methods using the same | GRANT | 2002-01-02 | 1995-10-26 | 24190263 | Great | Cirrus Logic Inc | Cirrus Logic Inc |
US5615162A | 0.892 | Selective power to memory | GRANT | 1997-03-25 | 1995-01-04 | 23451795 | Great | Texas Instruments Inc | Texas Instruments Inc |
EP0557119A2 | 0.890 | Address processing circuit and semiconductor memory device using the same | GRANT | 1993-08-25 | 1992-02-21 | 12425034 | Great | Kyushu Fujitsu Electronics Ltd, Fujitsu Ltd | Kyushu Fujitsu Electronics Ltd, Fujitsu Ltd |
EP1331642A1 | 0.889 | SEMICONDUCTOR STORAGE DEVICE ITS TESTING METHOD AND TEST CIRCUIT | GRANT | 2003-07-30 | 2000-08-31 | 18751950 | Great | NEC Electronics Corp | NEC Electronics Corp |
EP0054023A1 | 0.888 | SEMICONDUCTOR MEMORY FOR USE IN CONJUNCTION WITH ERROR DETECTION AND CORRECTION CIRCUIT | GRANT | 1982-06-23 | 1980-06-02 | 22154380 | Great | Mostek Corp | CTU of Delaware Inc |
EP0473388A2 | 0.887 | A dynamic type semiconductor memory device with a refresh function and method for refreshing the same | GRANT | 1992-03-04 | 1990-08-29 | 16886520 | Great | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
EP1256957A2 | 0.886 | System and method for performing partial array self-refresh operation in a semiconductor memory device. | GRANT | 2002-11-13 | 2001-05-07 | 26965544 | Great | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US6751159B2 | 0.885 | Memory device operable in either a high-power full-page size mode or a low-power reduced-page size mode | GRANT | 2004-06-15 | 2001-10-26 | 21907483 | Great | Micron Technology Inc | Round Rock Research LLC |
US5959925A | 0.884 | DRAM incorporating self refresh control circuit and system LSI including the DRAM | GRANT | 1999-09-28 | 1998-06-01 | 15524432 | Great | Mitsubishi Electric Corp | VACHELLIA LLC |
EP1287531A1 | 0.883 | TRANSPARENT CONTINUOUS REFRESH RAM CELL ARCHITECTURE | GRANT | 2003-03-05 | 2000-05-16 | 26899557 | Great | Broadcom Corp | Broadcom Corp |
EP0488593A2 | 0.883 | Dynamic random access memory device with improved refreshing unit | GRANT | 1992-06-03 | 1990-11-30 | 18333767 | Great | NEC Corp | NEC Corp |
US5329490A | 0.883 | Dynamic semiconductor memory with refresh function | GRANT | 1994-07-12 | 1992-03-23 | 13258113 | Great | NEC Corp | NEC Electronics Corp |
US6445636B1 | 0.881 | Method and system for hiding refreshes in a dynamic random access memory | GRANT | 2002-09-03 | 2000-08-17 | 24574243 | Great | Micron Technology Inc | Micron Technology Inc |
US4934826A | 0.881 | Block partitioned dynamic semiconductor memory device | GRANT | 1990-06-19 | 1987-06-24 | 15668065 | Great | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US6738304B2 | 0.878 | Dynamic memory device and method for controlling such a device | GRANT | 2004-05-18 | 2001-11-08 | 7704971 | Great | Infineon Technologies AG | Polaris Innovations Ltd |
US5835401A | 0.875 | Dram with hidden refresh | GRANT | 1998-11-10 | 1996-12-05 | 25060287 | Great | Cypress Semiconductor Corp | Rambus Inc |
EP1258887A2 | 0.874 | Memory architecture with refresh and sense amplifiers | GRANT | 2002-11-20 | 2001-05-14 | 25320463 | Great | Infineon Technologies AG | Infineon Technologies AG |
EP0442283B1 | 0.873 | Low power addressing systems | GRANT | 1996-05-08 | 1990-02-13 | 23902797 | Great | International Business Machines Corp | International Business Machines Corp |
US6567332B2 | 0.872 | Memory devices with reduced power consumption refresh cycles | GRANT | 2003-05-20 | 2001-03-15 | 25200050 | Great | Micron Technology Inc | Micron Technology Inc |
EP1215678A2 | 0.870 | Semiconductor memory and memory access method | GRANT | 2002-06-19 | 2000-12-04 | 18838663 | Great | Fujitsu Ltd | Socionext Inc |
US4972376A | 0.870 | Self-refresh system for use in a field memory device operating without reliance upon external control | GRANT | 1990-11-20 | 1987-11-09 | 17656323 | Great | Sharp Corp | Sharp Corp |
US5999472A | 0.870 | Multi-bank synchronous semiconductor memory device with easy control | GRANT | 1999-12-07 | 1997-08-08 | 16665069 | Great | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
EP1125300A1 | 0.870 | METHOD AND APPARATUS FOR INCREASING THE TIME AVAILABLE FOR REFRESH FOR 1-T SRAM COMPATIBLE DEVICES | GRANT | 2001-08-22 | 1998-10-27 | 22666033 | Great | Monolithic System Technology Inc | Mosys Inc |
EP1235228A1 | 0.868 | SEMICONDUCTOR STORAGE AND METHOD FOR TESTING THE SAME | GRANT | 2002-08-28 | 1999-12-03 | 27341181 | Great | NEC Corp | NEC Electronics Corp |
US5890198A | 0.868 | Intelligent refresh controller for dynamic memory devices | GRANT | 1999-03-30 | 1996-10-22 | 24955291 | Great | Micron Technology Inc | Micron Technology Inc |
US6529433B2 | 0.868 | Refresh mechanism in dynamic memories | GRANT | 2003-03-04 | 2001-04-03 | 25246151 | Great | Hynix Semiconductor Inc | SK Hynix Inc |
US4006468A | 0.867 | Dynamic memory initializing apparatus | GRANT | 1977-02-01 | 1973-08-06 | 27011289 | Great | Bull HN Information Systems Inc | Bull HN Information Systems Inc |
US5963497A | 0.866 | Dynamic random access memory system with simultaneous access and refresh operations and methods for using the same | GRANT | 1999-10-05 | 1998-05-18 | 22159783 | Great | Silicon Aquarius Inc | FOOTHILLS IP LLC |
EP0315991B1 | 0.865 | Virtual type static semiconductor memory device | GRANT | 1995-03-22 | 1987-11-10 | 17668971 | Great | Toshiba Corp | Toshiba Corp |
EP0528352A1 | 0.865 | Semiconductor memory device | GRANT | 1993-02-24 | 1991-08-13 | 16464769 | Great | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
EP0360526B1 | 0.863 | Semiconductor memory device having flash write function | GRANT | 1994-11-23 | 1988-09-20 | 16989868 | Great | Fujitsu VLSI Ltd, Fujitsu Ltd | Fujitsu VLSI Ltd, Fujitsu Ltd |
EP0409274A2 | 0.862 | Dynamic memory with a refresh control circuit | GRANT | 1991-01-23 | 1989-07-21 | 16241286 | Great | NEC Corp | NEC Corp |
US6646941B1 | 0.861 | Apparatus for operating an integrated circuit having a sleep mode | GRANT | 2003-11-11 | 1999-04-30 | 29401197 | Great | Madrone Solutions Inc | Madrone Solutions Inc |
US6005818A | 0.861 | Dynamic random access memory device with a latching mechanism that permits hidden refresh operations | GRANT | 1999-12-21 | 1998-01-20 | 21737063 | Great | STMicroelectronics lnc USA | STMicroelectronics lnc USA |
US6195303B1 | 0.860 | Clock-based transparent refresh mechanisms for DRAMS | GRANT | 2001-02-27 | 1999-10-25 | 23693691 | Great | Winbond Electronics Corp | Winbond Electronics Corp |
EP1214713A1 | 0.860 | ARCHITECTURE METHOD(S) AND CIRCUITRY FOR LOW POWER MEMORIES | GRANT | 2002-06-19 | 1999-09-17 | 23576591 | Great | Cypress Semiconductor Corp | Cypress Semiconductor Corp |
US5089987A | 0.859 | Refresh control circuit | GRANT | 1992-02-18 | 1989-03-30 | 13795230 | Great | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5511033A | 0.859 | Hidden self-refresh method and apparatus for synchronous dynamic random access memory | GRANT | 1996-04-23 | 1993-11-08 | 19367576 | Great | Hyundai Electronics Industries Co Ltd | SK Hynix Inc |
EP1351250A1 | 0.858 | SEMICONDUCTOR MEMORY DEVICE AND REFRESH CONTROL CIRCUIT | GRANT | 2003-10-08 | 2000-12-11 | 18844715 | Great | NEC Electronics Corp | NEC Electronics Corp |
EP0208325B1 | 0.852 | IMAGE MEMORY | GRANT | 1993-09-15 | 1985-07-10 | 15530338 | Great | Toshiba Corp | Toshiba Corp |
US6622197B1 | 0.851 | Dynamic random access memory device capable of programming a refresh period and a bit organization | GRANT | 2003-09-16 | 1999-06-17 | 19593086 | Great | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
EP0129651A2 | 0.850 | Dynamic semiconductor memory having sensing amplifiers | GRANT | 1985-01-02 | 1983-06-24 | 14624598 | Great | Toshiba Corp | Toshiba Corp |
US6104657A | 0.850 | Semiconductor integrated circuit device for changing DRAM row addresses according to operation mode | GRANT | 2000-08-15 | 1997-08-28 | 16939414 | Great | Toshiba Corp | Toshiba Corp |
EP1020866A1 | 0.849 | A dram capable of selectively performing a self-refresh operation | GRANT | 2000-07-19 | 1999-01-12 | 26634562 | Great | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
EP0276871B1 | 0.849 | Dual port video memory system having a bit-serial address input port | GRANT | 1994-05-11 | 1987-01-30 | 21733329 | Great | Hitachi Ltd, RCA Licensing Corp | Hitachi Ltd, RCA Licensing Corp |
US5566118A | 0.849 | Dynamic semiconductor memory device with sense amplifiers as cache memories | GRANT | 1996-10-15 | 1994-10-28 | 17419312 | Great | NEC Corp | PS4 Luxco SARL |
US5835441A | 0.848 | Column select latch for SDRAM | GRANT | 1998-11-10 | 1997-08-21 | 25436349 | Great | Micron Technology Inc | Micron Technology Inc |
EP0415433B1 | 0.847 | Main memory control system | GRANT | 1995-04-12 | 1989-09-01 | 16815118 | Great | Oki Electric Industry Co Ltd | Oki Electric Industry Co Ltd |
EP0267052B1 | 0.846 | SEMICONDUCTOR MEMORY DEVICE CARRYING OUT A SELF-REFRESH OPERATION | GRANT | 1993-01-13 | 1986-11-07 | 17416264 | Great | Fujitsu Ltd | Fujitsu Ltd |
US5737566A | 0.845 | Data processing system having a memory with both a high speed operating mode and a low power operating mode and method therefor | GRANT | 1998-04-07 | 1993-12-20 | 22614277 | Great | Motorola Inc | Apple Inc |
US5956288A | 0.840 | Modular memory system with shared memory access | GRANT | 1999-09-21 | 1997-12-22 | 25541495 | Great | EMC Corp | EMC Corp |
EP0585870B1 | 0.839 | Dynamic random access memory with voltage stress applying circuit | GRANT | 1998-04-15 | 1992-08-31 | 16911820 | Great | Toshiba Corp, Toshiba Microelectronics Corp | Toshiba Corp, Toshiba Electronic Device Solutions Corp |
US5349562A | 0.839 | Dynamic random access memory device suitable for shortening time required for testing self-refresh function | GRANT | 1994-09-20 | 1992-06-04 | 15353020 | Great | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
EP0654790B1 | 0.839 | Memory device | GRANT | 1999-04-21 | 1993-11-24 | 17796541 | Great | Toshiba Corp | Toshiba Corp |
US6570801B2 | 0.837 | Semiconductor memory having refresh function | GRANT | 2003-05-27 | 2000-10-27 | 18805966 | Great | Toshiba Corp | Toshiba Corp |
EP0509811A2 | 0.835 | Semiconductor memory device | GRANT | 1992-10-21 | 1991-04-18 | 27456838 | Great | Mitsubishi Electric Engineering Co Ltd, Mitsubishi Electric Corp | Mitsubishi Electric Engineering Co Ltd, Mitsubishi Electric Corp |
US6594195B2 | 0.835 | Low-power high-density semiconductor memory device | GRANT | 2003-07-15 | 2001-09-17 | 26680571 | Great | Cascade Semiconductor Corp | Acacia Research Group LLC, Cascade Semiconductor Corp |
US6028805A | 0.835 | Volatile memory and embedded dynamic random access memory | GRANT | 2000-02-22 | 1998-07-03 | 16228748 | Great | Mitsubishi Electric Corp | DRAM MEMORY TECHNOLOGIES LLC, Mitsubishi Electric Corp |
EP0138964B1 | 0.833 | APPARATUS FOR CONTROLLING ACCESS TO A MEMORY | GRANT | 1990-01-31 | 1983-03-30 | 23910168 | Great | Advanced Micro Devices Inc | Advanced Micro Devices Inc |
US7006401B2 | 0.833 | Semiconductor storage device and refresh control method thereof | GRANT | 2006-02-28 | 2001-12-27 | 19189216 | Great | NEC Electronics Corp | Renesas Electronics Corp |
US5305274A | 0.830 | Method and apparatus for refreshing a dynamic random access memory | GRANT | 1994-04-19 | 1992-09-16 | 25483286 | Great | Townsend and Townsend and Crew LLP | SK Hynix America Inc |
US6385113B1 | 0.830 | Method for operating an integrated circuit having a sleep mode | GRANT | 2002-05-07 | 1999-04-30 | 23171351 | Great | Madrone Solutions Inc | Madrone Solutions Inc |
US6603704B2 | 0.829 | Reduced current address selection circuit and method | GRANT | 2003-08-05 | 2001-09-26 | 25509636 | Great | Micron Technology Inc | Micron Technology Inc |
EP0326183B1 | 0.829 | Pseudo-static random access memory | GRANT | 1994-12-07 | 1988-01-29 | 12022622 | Great | NEC Corp | NEC Corp |
EP0116774B1 | 0.828 | SEMICONDUCTOR MEMORY DEVICE WITH A REFRESH MECHANISM | GRANT | 1991-07-24 | 1983-11-29 | 16849345 | Good | Toshiba Corp | Toshiba Corp |
US6370077B1 | 0.828 | Dynamic random access memory device and semiconductor integrated circuit device | GRANT | 2002-04-09 | 1999-04-09 | 26443917 | Good | Toshiba Corp | Kioxia Corp |
US5764582A | 0.826 | Apparatus and method of refreshing a dynamic random access memory | GRANT | 1998-06-09 | 1996-11-26 | 25045084 | Good | Powerchip Semiconductor Corp | Powerchip Technology Corp |
US4933907A | 0.825 | Dynamic random access memory device and operating method therefor | GRANT | 1990-06-12 | 1987-12-03 | 27330511 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5321662A | 0.824 | Dynamic random access memory device having a self refresh mode | GRANT | 1994-06-14 | 1992-10-09 | 17506688 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
EP0437158B1 | 0.824 | Memory card refresh buffer | GRANT | 1996-02-28 | 1989-12-13 | 23786921 | Good | International Business Machines Corp | International Business Machines Corp |
US6603694B1 | 0.824 | Dynamic memory refresh circuitry | GRANT | 2003-08-05 | 2002-02-05 | 27622755 | Good | Infineon Technologies North America Corp | Polaris Innovations Ltd |
US5596545A | 0.822 | Semiconductor memory device with internal self-refreshing | GRANT | 1997-01-21 | 1995-12-04 | 24264821 | Good | Ramax Inc | Intel Corp |
EP0952587B1 | 0.820 | Fast DRAM layout | GRANT | 2003-05-14 | 1998-03-26 | 9524716 | Good | STMicroelectronics SA | STMicroelectronics SA |
EP0552667A1 | 0.820 | Enhanced dram with embedded registers | GRANT | 1993-07-28 | 1992-01-22 | 25240869 | Good | Ramtron International Corp, United Memories Inc | Enhanced Memory Systems Inc |
EP0647945A2 | 0.818 | Burst refresh mode for DRAMs | GRANT | 1995-04-12 | 1993-10-12 | 22465637 | Good | Nippon Steel Semiconductor Corp, United Memories Inc | Promos Technologies Inc |
US6195300B1 | 0.817 | CBR refresh control for the redundancy array | GRANT | 2001-02-27 | 2000-03-24 | 24137503 | Good | Infineon Technologies North America Corp, International Business Machines Corp | Samsung Electronics Co Ltd, International Business Machines Corp |
US5471430A | 0.817 | Test circuit for refresh counter of clock synchronous type semiconductor memory device | GRANT | 1995-11-28 | 1993-05-24 | 14804809 | Good | Mitsubishi Electric Corp | DRAM MEMORY TECHNOLOGIES LLC, Mitsubishi Electric Corp |
US6570802B2 | 0.816 | Semiconductor memory device | GRANT | 2003-05-27 | 2000-11-15 | 18822036 | Good | Matsushita Electric Industrial Co Ltd | CETUS TECHNOLOGIES INC. |
EP0495572B1 | 0.816 | Refreshing ferroelectric capacitors | GRANT | 1998-04-29 | 1991-01-16 | 24574847 | Good | National Semiconductor Corp | National Semiconductor Corp |
US6771553B2 | 0.816 | Low power auto-refresh circuit and method for dynamic random access memories | GRANT | 2004-08-03 | 2001-10-18 | 22007458 | Good | Micron Technology Inc | Round Rock Research LLC |
US6104669A | 0.816 | Method and apparatus for generating memory addresses for testing memory devices | GRANT | 2000-08-15 | 1998-05-22 | 22180971 | Good | Micron Technology Inc | Micron Technology Inc |
US6285617B1 | 0.816 | Semiconductor memory device preventing malfunction during refresh operation even when noise is superimposed on control signal | GRANT | 2001-09-04 | 1999-10-29 | 17985063 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US5623451A | 0.814 | Semiconductor memory device | GRANT | 1997-04-22 | 1995-10-04 | 17306391 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US6721223B2 | 0.814 | Semiconductor memory device | GRANT | 2004-04-13 | 2001-06-15 | 19021462 | Good | Renesas Technology Corp | Renesas Technology Corp |
US5404335A | 0.813 | Dynamic type semiconductor memory device operable in a self-refreshing mode | GRANT | 1995-04-04 | 1992-04-01 | 13652611 | Good | Mitsubishi Electric Corp | DRAM MEMORY TECHNOLOGIES LLC, Mitsubishi Electric Corp |
EP1074993A1 | 0.813 | Semiconductor memory device with reduced current consumption in data hold mode | GRANT | 2001-02-07 | 1999-08-05 | 16785089 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5715206A | 0.812 | Dynamic random access memory having sequential word line refresh | GRANT | 1998-02-03 | 1995-08-24 | 19424312 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US6603698B2 | 0.812 | Memory device and computer system including circuit for adjusting a self-refresh rate to maintain dynamic data at low supply voltages | GRANT | 2003-08-05 | 2001-10-09 | 27623480 | Good | Micron Technology Inc | Round Rock Research LLC |
US4967397A | 0.811 | Dynamic RAM controller | GRANT | 1990-10-30 | 1989-05-15 | 23382835 | Good | Unisys Corp | Unisys Corp |
EP0987714B1 | 0.811 | Apparatus and method for static random access memory array | GRANT | 2003-07-02 | 1998-09-17 | 22281200 | Good | Texas Instruments Inc | Texas Instruments Inc |
WO1998006100A1 | 0.810 | BITLINE PRECHARGE HALT ACCESS MODE FOR LOW POWER OPERATION OF A MEMORY DEVICE | APPLICATION | 1998-02-12 | 1996-08-08 | 24787008 | Good | ||
US5644545A | 0.810 | Bimodal refresh circuit and method for using same to reduce standby current and enhance yields of dynamic memory products | GRANT | 1997-07-01 | 1996-02-14 | 24406516 | Good | Nippon Steel Semiconductor Corp, United Memories Inc | UMC Japan Co Ltd, Promos Technologies Inc |
EP0457310B1 | 0.809 | Memory card | GRANT | 1998-01-07 | 1990-05-15 | 27471060 | Good | Seiko Epson Corp | Seiko Epson Corp |
US6765838B2 | 0.808 | Refresh control circuitry for refreshing storage data | GRANT | 2004-07-20 | 2001-10-29 | 19146598 | Good | Renesas Technology Corp | DRAM MEMORY TECHNOLOGIES LLC |
US6633952B2 | 0.805 | Programmable refresh scheduler for embedded DRAMs | GRANT | 2003-10-14 | 2000-10-03 | 27399037 | Good | Broadcom Corp | Avago Technologies International Sales Pte Ltd |
EP1168358A2 | 0.805 | Refresh-type memory with zero write recovery time and no maximum cycle time | GRANT | 2002-01-02 | 2000-06-30 | 24439758 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US7640391B2 | 0.804 | Integrated circuit random access memory capable of automatic internal refresh of memory array | GRANT | 2009-12-29 | 1999-02-13 | 26817993 | Good | PRFA Technology Fund LLC | Innomemory LLC, ARLENE H PROEBSTING AND TODD A PROEBSTING TRUSTEES OF ROBERT J PROEBSTING AND ARLENE H PROEBSTING FAMILY TRUST UNDER TRUST AGREEMENT DATED FEBRUARY 5 1996 AS AMENDED ALSO KNOWN AS PROEBSTING FAMILY TRUST |
US5608682A | 0.804 | Semiconductor memory device | GRANT | 1997-03-04 | 1995-02-22 | 12392164 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
EP0567104A2 | 0.801 | Circuit for detecting refresh address signals of a semiconductor memory device | GRANT | 1993-10-27 | 1992-04-22 | 19332103 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US5701143A | 0.801 | Circuits systems and methods for improving row select speed in a row select memory device | GRANT | 1997-12-23 | 1995-01-31 | 23504054 | Good | Cirrus Logic Inc | Intellectual Ventures II LLC |
US5422850A | 0.801 | Semiconductor memory device and defective memory cell repair circuit | GRANT | 1995-06-06 | 1993-07-12 | 22222818 | Good | Hitachi Ltd, Texas Instruments Inc | Hitachi Ltd, Texas Instruments Inc |
US7061818B2 | 0.799 | Memory and refresh method for memory | GRANT | 2006-06-13 | 2001-03-29 | 18949455 | Good | International Business Machines Corp | Twitter Inc |
US6392948B1 | 0.799 | Semiconductor device with self refresh test mode | GRANT | 2002-05-21 | 1996-08-29 | 24832242 | Good | Micron Technology Inc | Round Rock Research LLC |
US6327209B1 | 0.799 | Multi stage refresh control of a memory device | GRANT | 2001-12-04 | 2000-08-30 | 24610013 | Good | Micron Technology Inc | Micron Technology Inc |
EP1398792A1 | 0.796 | SEMICONDUCTOR STORAGE DEVICE | GRANT | 2004-03-17 | 2001-04-02 | 18956658 | Good | NEC Corp | NEC Corp |
US5933377A | 0.796 | Semiconductor memory device and defect repair method for semiconductor memory device | GRANT | 1999-08-03 | 1997-03-25 | 13460040 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US5566119A | 0.796 | Synchronous DRAM performing refresh operation a plurality of times in response to each refresh request command | GRANT | 1996-10-15 | 1994-11-10 | 17881689 | Good | NEC Corp | NEC Electronics Corp |
US6208577B1 | 0.795 | Circuit and method for refreshing data stored in a memory cell | GRANT | 2001-03-27 | 1999-04-16 | 23128094 | Good | Micron Technology Inc | Round Rock Research LLC |
EP0811979A2 | 0.793 | A semiconductor memory device with a large storage capacity memory and a fast speed memory | GRANT | 1997-12-10 | 1990-12-25 | 27281926 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
EP1225589A2 | 0.791 | Semiconductor memory device having a plurality of low power consumption modes | GRANT | 2002-07-24 | 2000-11-30 | 18835496 | Good | Fujitsu Ltd | Fujitsu Ltd |
EP0468135A2 | 0.790 | A high speed dynamic random access memory with extended reset/precharge time | GRANT | 1992-01-29 | 1990-06-29 | 24177584 | Good | International Business Machines Corp | International Business Machines Corp |
EP1291880A1 | 0.789 | SEMICONDUCTOR STORAGE DEVICE | GRANT | 2003-03-12 | 2000-04-11 | 26589872 | Good | NEC Corp | NEC Electronics Corp |
EP0174638A2 | 0.789 | Integrated circuit with function of monitoring an internal signal | GRANT | 1986-03-19 | 1984-09-10 | 16235481 | Good | NEC Corp | NEC Corp |
EP1147521B1 | 0.785 | FLASH MEMORY ARRAY WITH INTERNAL REFRESH | GRANT | 2006-12-27 | 1998-09-17 | 22558602 | Good | Atmel Corp | Atmel Corp |
US6327210B1 | 0.784 | Semiconductor memory device | GRANT | 2001-12-04 | 1999-11-16 | 18170941 | Good | Matsushita Electric Industrial Co Ltd | Nuvoton Technology Corp Japan |
US6215714B1 | 0.783 | Semiconductor memory device capable of reducing power consumption in self-refresh operation | GRANT | 2001-04-10 | 1999-04-14 | 14443286 | Good | Fujitsu Ltd | Socionext Inc |
US6519201B2 | 0.781 | Refresh controller and address remapping circuit and method for dual mode full/reduced density DRAMs | GRANT | 2003-02-11 | 2001-03-08 | 27663649 | Good | Micron Technology Inc | Round Rock Research LLC |
EP0465050A1 | 0.780 | A digital computer having a system for sequentially refreshing an expandable dynamic RAM memory circuit | GRANT | 1992-01-08 | 1990-06-19 | 24153771 | Good | Dell USA LP, Dell USA Corp | Dell USA LP |
WO1997030453A1 | 0.780 | AUTO REFRESH TO SPECIFIED BANK | APPLICATION | 1997-08-21 | 1996-02-16 | 24411984 | Good | ||
EP0217867B1 | 0.779 | MEMORY SYSTEM HAVING REFRESH CONTROL MEANS | GRANT | 1990-02-07 | 1985-04-01 | 24887431 | Good | NCR Corp | NCR Corp |
US5537564A | 0.778 | Technique for accessing and refreshing memory locations within electronic storage devices which need to be refreshed with minimum power consumption | GRANT | 1996-07-16 | 1993-03-08 | 21839089 | Good | Zilog Inc | IXYS Intl Ltd |
EP1119862A1 | 0.777 | READ/WRITE BUFFERS FOR COMPLETE HIDING OF THE REFRESH OF A SEMICONDUCTOR MEMORY AND METHOD OF OPERATING SAME | GRANT | 2001-08-01 | 1998-10-01 | 22598011 | Good | Monolithic System Technology Inc | Mosys Inc |
US4494222A | 0.777 | Processor system using on-chip refresh address generator for dynamic memory | GRANT | 1985-01-15 | 1980-03-28 | 26832931 | Good | Texas Instruments Inc | Texas Instruments Inc |
EP0019150A1 | 0.777 | Method of testing the operation of an internal refresh counter in a random access memory and circuit for the testing thereof | GRANT | 1980-11-26 | 1979-05-15 | 21904460 | Good | Mostek Corp | CTU of Delaware Inc |
US5999471A | 0.775 | Semiconductor memory device having a refresh function and a method for refreshing the same | GRANT | 1999-12-07 | 1997-01-30 | 19496026 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
EP1020867B1 | 0.775 | Method for refreshing a dynamic memory | GRANT | 2010-04-14 | 1999-01-11 | 8553307 | Good | Nokia Oyj | Nokia Oyj |
EP0793827B1 | 0.774 | METHOD AND STRUCTURE FOR UTILIZING A DRAM ARRAY AS SECOND LEVEL CACHE MEMORY | GRANT | 2002-03-06 | 1994-11-22 | 26993415 | Good | Monolithic System Technology Inc | Mosys Inc |
US5598374A | 0.774 | Pipeland address memories and systems and methods using the same | GRANT | 1997-01-28 | 1995-07-14 | 23998020 | Good | Cirrus Logic Inc | Intellectual Ventures II LLC |
EP0170912B1 | 0.773 | INTEGRATED CIRCUIT HAVING A COMMON INPUT TERMINAL | GRANT | 1991-10-09 | 1984-07-09 | 15300491 | Good | NEC Corp | NEC Corp |
US5701270A | 0.773 | Single chip controller-memory device with interbank cell replacement capability and a memory architecture and methods suitble for implementing the same | GRANT | 1997-12-23 | 1994-05-09 | 26932714 | Good | Cirrus Logic Inc | Intellectual Ventures II LLC |
EP1384231A2 | 0.768 | METHOD AND APPARATUS FOR COMPLETELY HIDING REFRESH OPERATIONS IN A DRAM DEVICE USING MULTIPLE CLOCK DIVISION | GRANT | 2004-01-28 | 2001-05-01 | 26812013 | Good | Monolithic System Technology Inc | Invensas LLC |
US5798976A | 0.768 | Semiconductor memory device with reduced current consumption in data holding mode | GRANT | 1998-08-25 | 1995-12-18 | 18213653 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US6744685B2 | 0.765 | Semiconductor device method for refreshing the same and electronic equipment | GRANT | 2004-06-01 | 2000-07-21 | 18715099 | Good | Seiko Epson Corp | Seiko Epson Corp |
US6061290A | 0.764 | Method and apparatus for simultaneous memory subarray testing | GRANT | 2000-05-09 | 1997-06-30 | 25387130 | Good | Micron Technology Inc | Micron Technology Inc |
US6167484A | 0.763 | Method and apparatus for leveraging history bits to optimize memory refresh performance | GRANT | 2000-12-26 | 1998-05-12 | 22130222 | Good | Motorola Inc | NXP USA Inc |
EP1288961B1 | 0.763 | Semiconductor memory | GRANT | 2011-01-12 | 2001-08-03 | 26619960 | Good | Fujitsu Semiconductor Ltd | Fujitsu Semiconductor Ltd |
US6654303B2 | 0.763 | Semiconductor memory device method for controlling same and electronic information apparatus | GRANT | 2003-11-25 | 2001-06-15 | 19022550 | Good | Sharp Corp | Sharp Corp |
US5265231A | 0.763 | Refresh control arrangement and a method for refreshing a plurality of random access memory banks in a memory system | GRANT | 1993-11-23 | 1991-02-08 | 24618220 | Good | Thinking Machines Corp | Thinking Machines Corp, TM Patents LP |
EP0871178A2 | 0.762 | Integrated circuit having standby control for memory | GRANT | 1998-10-14 | 1997-04-07 | 25269315 | Good | Motorola Inc | NXP USA Inc |
US6449203B1 | 0.762 | Refresh controller and address remapping circuit and method for dual mode full/reduced density DRAMs | GRANT | 2002-09-10 | 2001-03-08 | 25186344 | Good | Micron Technology Inc | Round Rock Research LLC |
EP0942430A1 | 0.762 | Method and apparatus for 1-T SRAM compatible memory | GRANT | 1999-09-15 | 1998-03-09 | 21894121 | Good | Mosys Inc, Monolithic System Technology Inc | Mosys Inc |
US6222785B1 | 0.761 | Method and apparatus for refreshing a semiconductor memory using idle memory cycles | GRANT | 2001-04-24 | 1999-01-20 | 22882792 | Good | Monolithic System Technology Inc | Invensas LLC |
EP0425693B1 | 0.761 | MEMORY CARTRIDGE AND MEMORY CONTROL METHOD | GRANT | 1996-09-04 | 1989-05-08 | 27526611 | Good | Hitachi Ltd, Hitachi Maxell Ltd | Hitachi Ltd, Maxell Holdings Ltd |
US6219292B1 | 0.761 | Semiconductor memory device having reduced power requirements during refresh operation by performing refresh operation in a burst method | GRANT | 2001-04-17 | 1998-12-30 | 19568655 | Good | Hyundai Electronics Industries Co Ltd | SK Hynix Inc |
US5774409A | 0.760 | Multi-bank dRAM suitable for integration with processor on common semiconductor chip | GRANT | 1998-06-30 | 1996-04-22 | 14266186 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5859809A | 0.759 | Semiconductor device of daisy chain structure having independent refresh apparatus | GRANT | 1999-01-12 | 1996-12-31 | 19493511 | Good | Hyundai Electronics Industries Co Ltd | SK Hynix Inc |
US4334295A | 0.759 | Memory device | GRANT | 1982-06-08 | 1979-05-08 | 13019334 | Good | Nippon Electric Co Ltd | NEC Corp |
US6134168A | 0.758 | Circuit and method for internal refresh counter | GRANT | 2000-10-17 | 1997-04-25 | 27366582 | Good | Texas Instruments Inc | Texas Instruments Inc |
US5450364A | 0.758 | Method and apparatus for production testing of self-refresh operations and a particular application to synchronous memory devices | GRANT | 1995-09-12 | 1994-01-31 | 22697776 | Good | Texas Instruments Inc | Texas Instruments Inc |
EP0153469B1 | 0.758 | REFRESH GENERATOR SYSTEM FOR A DYNAMIC MEMORY | GRANT | 1989-05-17 | 1984-02-27 | 24335623 | Good | International Business Machines Corp | International Business Machines Corp |
US4185323A | 0.757 | Dynamic memory system which includes apparatus for performing refresh operations in parallel with normal memory operations | GRANT | 1980-01-22 | 1978-07-20 | 25453264 | Good | Bull HN Information Systems Inc | Bull HN Information Systems Inc |
US5835436A | 0.757 | Dynamic type semiconductor memory device capable of transferring data between array blocks at high speed | GRANT | 1998-11-10 | 1995-07-03 | 15848245 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US4914630A | 0.756 | Refresh arrangement in a block divided memory including a plurality of shift registers | GRANT | 1990-04-03 | 1987-05-15 | 14755742 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
EP1251521A1 | 0.756 | A dynamic random access memory device externally functionally equivalent to a static random access memory | GRANT | 2002-10-23 | 2001-04-19 | 8184493 | Good | STMicroelectronics SRL | STMicroelectronics SRL |
EP0563082A1 | 0.754 | HIDDEN REFRESH OF A DYNAMIC RANDOM ACCESS MEMORY. | GRANT | 1993-10-06 | 1990-12-21 | 24532007 | Good | VLSI Technology Inc | Philips Semiconductors Inc |
US5276649A | 0.754 | Dynamic-type semiconductor memory device having staggered activation of column groups | GRANT | 1994-01-04 | 1989-03-16 | 27520487 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US6538953B2 | 0.754 | Semiconductor memory device | GRANT | 2003-03-25 | 2000-06-21 | 18686293 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US6507529B2 | 0.754 | Semiconductor device | GRANT | 2003-01-14 | 2000-12-07 | 18842004 | Good | Matsushita Electric Industrial Co Ltd | Nuvoton Technology Corp Japan |
US4688196A | 0.753 | Semiconductor dynamic memory device with less power consumption in internal refresh mode | GRANT | 1987-08-18 | 1983-09-06 | 15774243 | Good | NEC Corp | NEC Corp |
US6501701B2 | 0.752 | Semiconductor memory device | GRANT | 2002-12-31 | 2000-06-16 | 18682873 | Good | Matsushita Electric Industrial Co Ltd | Nuvoton Technology Corp Japan |
EP0519584A2 | 0.752 | Semiconductor memory | GRANT | 1992-12-23 | 1991-06-21 | 15499352 | Good | Sharp Corp | Sharp Corp |
US6392952B1 | 0.749 | Memory refresh circuit and memory refresh method | GRANT | 2002-05-21 | 2001-05-15 | 25322594 | Good | United Microelectronics Corp | United Microelectronics Corp |
US5796668A | 0.749 | Integrated circuit memory devices having reduced write cycle times and related methods | GRANT | 1998-08-18 | 1995-09-06 | 19426293 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
EP1061523A1 | 0.747 | Semiconductor memory device and electronic apparatus | GRANT | 2000-12-20 | 1999-06-10 | 15774329 | Good | Fujitsu Ltd, Fujitsu Semiconductor Ltd | Fujitsu Semiconductor Ltd |
EP1402531A2 | 0.747 | DRAM WITH BIT LINE PRECHARGING INVERTED DATA WRITING RETAINED DATA OUTPUT AND REDUCED POWER CONSUMPTION | GRANT | 2004-03-31 | 2001-06-11 | 26818600 | Good | Analog Devices Inc | Analog Devices Inc |
US6650587B2 | 0.747 | Partial array self-refresh | GRANT | 2003-11-18 | 2001-11-19 | 25534655 | Good | Micron Technology Inc | Round Rock Research LLC |
EP0473421B1 | 0.746 | Semiconductor memory device | GRANT | 1997-10-29 | 1990-08-30 | 16900925 | Good | NEC Corp | NEC Corp |
US5831921A | 0.745 | Semiconductor memory device having signal generating circuitry for sequentially refreshing memory cells in each memory cell block in a self-refresh mode | GRANT | 1998-11-03 | 1995-12-11 | 18134949 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US5793694A | 0.745 | Semiconductor integrated circuit device having means for peak current reduction | GRANT | 1998-08-11 | 1995-12-22 | 21730665 | Good | Hitachi Ltd | Hitachi Ltd |
US6075744A | 0.740 | Dram core refresh with reduced spike current | GRANT | 2000-06-13 | 1997-10-10 | 22037999 | Good | Rambus Inc | Rambus Inc |
US6118710A | 0.740 | Semiconductor memory device including disturb refresh test circuit | GRANT | 2000-09-12 | 1998-06-08 | 15684732 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5299159A | 0.739 | Serial register stage arranged for connection with a single bitline | GRANT | 1994-03-29 | 1992-06-29 | 25421758 | Good | Texas Instruments Inc | Texas Instruments Inc |
US6496437B2 | 0.739 | Method and apparatus for forcing idle cycles to enable refresh operations in a semiconductor memory | GRANT | 2002-12-17 | 1999-01-20 | 25166344 | Good | Monolithic System Technology Inc | Mosys Inc |
US6535445B1 | 0.738 | Method of controlling a memory cell refresh circuit using charge sharing | GRANT | 2003-03-18 | 2001-01-03 | 25031744 | Good | Cypress Semiconductor Corp | Callahan Cellular LLC |
US5822264A | 0.735 | Dynamic semiconductor memory device with SOI structure and body refresh circuitry | GRANT | 1998-10-13 | 1996-12-10 | 18224757 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US6513130B1 | 0.734 | Circuits systems and methods for accounting for defective cells in a memory device | GRANT | 2003-01-28 | 1994-11-15 | 23332156 | Good | Cirrus Logic Inc | FOOTHILLS IP LLC |
US6002629A | 0.733 | Integrated circuit memory devices having improved refresh mode addressing and methods of operating same | GRANT | 1999-12-14 | 1997-12-06 | 19526638 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US6538948B2 | 0.733 | Semiconductor device refreshing method thereof memory system and electronic instrument | GRANT | 2003-03-25 | 2000-10-20 | 18799179 | Good | Seiko Epson Corp | Seiko Epson Corp |
US6011734A | 0.733 | Fuseless memory repair system and method of operation | GRANT | 2000-01-04 | 1998-03-12 | 21901696 | Good | Motorola Inc | NXP USA Inc |
EP0456255A2 | 0.732 | Dynamic memory device and method for screening the same | GRANT | 1991-11-13 | 1990-05-11 | 14774176 | Good | Toshiba Corp | Toshiba Corp |
US6104658A | 0.731 | Distributed DRAM refreshing | GRANT | 2000-08-15 | 1996-08-08 | 46255185 | Good | NeoMagic Corp | Xylon LLC |
US4912678A | 0.729 | Dynamic random access memory device with staggered refresh | GRANT | 1990-03-27 | 1987-09-26 | 17068654 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US6310814B1 | 0.728 | Rambus DRAM (RDRAM) apparatus and method for performing refresh operations | GRANT | 2001-10-30 | 1998-03-10 | 21899454 | Good | Rambus Inc | Rambus Inc |
US5999473A | 0.727 | Circuit and method for internal refresh counter | GRANT | 1999-12-07 | 1997-04-25 | 27366581 | Good | Texas Instruments Inc | Texas Instruments Inc |
US6310806B1 | 0.727 | Semiconductor memory device with redundant circuit | GRANT | 2001-10-30 | 1999-11-26 | 18300917 | Good | Toshiba Corp | Toshiba Corp |
US5535169A | 0.722 | Semiconductor memory device | GRANT | 1996-07-09 | 1993-12-28 | 18306577 | Good | Fujitsu Ltd | Fujitsu Semiconductor Ltd |
US5331601A | 0.722 | DRAM variable row select | GRANT | 1994-07-19 | 1993-02-04 | 21759428 | Good | Nippon Steel Semiconductor Corp, United Memories Inc | United Microelectronics Corp |
US6738282B2 | 0.721 | Random access memory and method for controlling operations of reading writing and refreshing data of the same | GRANT | 2004-05-18 | 2002-01-12 | 19718418 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US20020080677A1 | 0.719 | Semiconductor memory device | APPLICATION | 2002-06-27 | 2000-09-06 | 27344559 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US6009036A | 0.718 | Memory device | GRANT | 1999-12-28 | 1996-10-30 | 17732375 | Good | Oki Electric Industry Co Ltd | Lapis Semiconductor Co Ltd |
US5446695A | 0.717 | Memory device with programmable self-refreshing and testing methods therefore | GRANT | 1995-08-29 | 1994-03-22 | 22807629 | Good | International Business Machines Corp | GlobalFoundries Inc |
US5295110A | 0.717 | Semiconductor memory device incorporated with self-refresh circuit | GRANT | 1994-03-15 | 1992-01-30 | 12577458 | Good | NEC Corp | Micron Memory Japan Ltd |
US6504787B2 | 0.715 | Semiconductor memory device with reduced power consumption during refresh operation | GRANT | 2003-01-07 | 2001-06-07 | 19013994 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
WO2002059901A1 | 0.715 | SINGLE-PORT MULTI-BANK MEMORY SYSTEM HAVING READ AND WRITE BUFFERS AND METHOD OF OPERATING SAME | APPLICATION | 2002-08-01 | 2001-01-23 | 25083840 | Good | ||
US7093067B2 | 0.715 | DRAM architecture enabling refresh and access operations in the same bank | GRANT | 2006-08-15 | 2001-03-30 | 18951619 | Good | International Business Machines Corp | International Business Machines Corp |
US5708611A | 0.715 | Synchronous semiconductor memory device | GRANT | 1998-01-13 | 1994-11-22 | 17723841 | Good | Mitsubishi Electric Corp | DRAM MEMORY TECHNOLOGIES LLC, Mitsubishi Electric Corp |
US5856940A | 0.714 | Low latency DRAM cell and method therefor | GRANT | 1999-01-05 | 1997-08-15 | 25430772 | Good | Silicon Aquarius Inc | FOOTHILLS IP LLC |
US5262998A | 0.713 | Dynamic random access memory with operational sleep mode | GRANT | 1993-11-16 | 1991-08-14 | 24994754 | Good | Micron Technology Inc | Micron Technology Inc, Round Rock Research LLC, Ceram Inc |
US5796669A | 0.712 | Synchronous semiconductor memory device | GRANT | 1998-08-18 | 1997-03-03 | 12788539 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US20030067825A1 | 0.708 | Semiconductor memory device | APPLICATION | 2003-04-10 | 2001-10-05 | 19129177 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US5253211A | 0.708 | Semiconductor memory device capable of performing refresh operation in reading or writing | GRANT | 1993-10-12 | 1991-04-16 | 13825075 | Good | Mitsubishi Electric Corp | DRAM MEMORY TECHNOLOGIES LLC, Mitsubishi Electric Corp |
US4716551A | 0.705 | Semiconductor memory device with variable self-refresh cycle | GRANT | 1987-12-29 | 1983-09-14 | 15892592 | Good | NEC Corp | NEC Corp |
US20030161208A1 | 0.704 | Semiconductor memory device refresh control method thereof and test method thereof | APPLICATION | 2003-08-28 | 2002-02-25 | 27750693 | Good | Fujitsu Ltd | Fujitsu Ltd |
EP0616331B1 | 0.702 | Semiconductor memory device | GRANT | 2002-05-29 | 1993-03-19 | 13852491 | Good | Toshiba Corp | Toshiba Corp |
US5629898A | 0.702 | Dynamic memory device a memory module and a method of refreshing a dynamic memory device | GRANT | 1997-05-13 | 1995-03-03 | 26410160 | Good | Hitachi Ltd | PS4 Luxco SARL |
US5457659A | 0.701 | Programmable dynamic random access memory (DRAM) | GRANT | 1995-10-10 | 1994-07-19 | 23058991 | Good | Micron Technology Inc | Micron Technology Inc |
EP0986064A2 | 0.700 | Integrated semiconductor memory | GRANT | 2000-03-15 | 1998-09-08 | 7880219 | Good | Siemens AG | Infineon Technologies AG |
US4758993A | 0.700 | Random access memory device formed on a semiconductor substrate having an array of memory cells divided into sub-arrays | GRANT | 1988-07-19 | 1984-11-19 | 27333191 | Good | Fujitsu Ltd | Fujitsu Ltd |
US5446696A | 0.696 | Method and apparatus for implementing refresh in a synchronous DRAM system | GRANT | 1995-08-29 | 1993-05-28 | 22084526 | Good | Rambus Inc | Rambus Inc |
US6212118B1 | 0.695 | Semiconductor memory | GRANT | 2001-04-03 | 1997-12-12 | 18356860 | Good | NEC Corp | NEC Electronics Corp |
US7283380B1 | 0.695 | Content addressable memory with selective error logging | GRANT | 2007-10-16 | 2001-08-03 | 38577812 | Good | Netlogic Microsystems Inc | Avago Technologies International Sales Pte Ltd |
US4989183A | 0.693 | Semiconductor memory device improved for externally designating operation mode | GRANT | 1991-01-29 | 1988-08-31 | 16724200 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US6343043B2 | 0.689 | Dynamic random access memory | GRANT | 2002-01-29 | 2000-03-13 | 18587939 | Good | Oki Electric Industry Co Ltd | Lapis Semiconductor Co Ltd |
EP1248269A1 | 0.686 | Semiconductor memory device and method for selecting multiple word lines in a semiconductor memory device | GRANT | 2002-10-09 | 2001-04-06 | 18960825 | Good | Fujitsu Ltd | Fujitsu Ltd |
US5418754A | 0.684 | Dynamic random access memory device with self-refresh cycle time directly measurable at data pin | GRANT | 1995-05-23 | 1993-02-10 | 12732296 | Good | NEC Corp | PS4 Luxco SARL |
US5831924A | 0.683 | Synchronous semiconductor memory device having a plurality of banks distributed in a plurality of memory arrays | GRANT | 1998-11-03 | 1995-09-07 | 16904872 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5943283A | 0.683 | Address scrambling in a semiconductor memory | GRANT | 1999-08-24 | 1997-12-05 | 25532189 | Good | INVOX Technology | SanDisk Technologies LLC |
EP0887803A2 | 0.681 | Computer Memory controller | GRANT | 1998-12-30 | 1997-06-19 | 15762699 | Good | NEC Corp | NEC Corp |
US5477491A | 0.681 | Semiconductor memory device with a self-initializing circuit operable after supply of power | GRANT | 1995-12-19 | 1992-03-25 | 13331074 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5469559A | 0.680 | Method and apparatus for refreshing a selected portion of a dynamic random access memory | GRANT | 1995-11-21 | 1993-07-06 | 22209159 | Good | Dell USA LP | Dell USA LP |
US7043598B2 | 0.679 | Method and apparatus for dynamic memory refreshing | GRANT | 2006-05-09 | 2001-12-31 | 21890933 | Good | Taiwan Semiconductor Manufacturing Co TSMC Ltd | Taiwan Semiconductor Manufacturing Co TSMC Ltd |
US6064621A | 0.678 | Multi-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangement | GRANT | 2000-05-16 | 1998-01-13 | 11596778 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US7085186B2 | 0.673 | Method for hiding a refresh in a pseudo-static memory | GRANT | 2006-08-01 | 2001-04-05 | 25251366 | Good | Purple Mountain Server LLC | Intellectual Ventures I LLC |
US5661690A | 0.673 | Circuit and method for performing tests on memory array cells using external sense amplifier reference current | GRANT | 1997-08-26 | 1996-02-27 | 24433370 | Good | Micron Quantum Devices Inc | Micron Technology Inc |
US6256244B1 | 0.672 | Self refresh apparatus in semiconductor memory device | GRANT | 2001-07-03 | 1999-06-29 | 19597064 | Good | Hyundai Electronics Industries Co Ltd | SK Hynix Inc |
US4958322A | 0.672 | Semiconductor pseudo memory module | GRANT | 1990-09-18 | 1988-07-06 | 15867867 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5719815A | 0.672 | Semiconductor memory having a refresh operation cycle and operating at a high speed and reduced power consumption in a normal operation cycle | GRANT | 1998-02-17 | 1988-05-13 | 27552468 | Good | Hitachi Ltd | Hitachi Ltd |
US6657920B2 | 0.671 | Circuit for generating internal address in semiconductor memory device | GRANT | 2003-12-02 | 2001-09-20 | 19714450 | Good | Hynix Semiconductor Inc | Mosaid Technologies Inc |
US6898140B2 | 0.670 | Method and apparatus for temperature adaptive refresh in 1T-SRAM compatible memory using the subthreshold characteristics of MOSFET transistors | GRANT | 2005-05-24 | 1998-10-01 | 29255532 | Good | Monolithic System Technology Inc | Invensas LLC |
EP0338528A2 | 0.669 | Semiconductor memory | GRANT | 1989-10-25 | 1988-04-19 | 14157269 | Good | Toshiba Corp | Toshiba Corp |
US6222786B1 | 0.667 | Dynamic random access memory with write-without-restore and systems and methods using the same | GRANT | 2001-04-24 | 1999-11-02 | 23715608 | Good | Silicon Aquarius Inc | FOOTHILLS IP LLC |
US6633505B2 | 0.664 | Semiconductor memory device control method thereof and control method of semiconductor device | GRANT | 2003-10-14 | 2001-11-07 | 19156108 | Good | Fujitsu Ltd | Socionext Inc |
US6597617B2 | 0.662 | Semiconductor device with reduced current consumption in standby state | GRANT | 2003-07-22 | 2000-05-24 | 18658046 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US4380805A | 0.662 | Tape burn-in circuit | GRANT | 1983-04-19 | 1980-09-08 | 23061813 | Good | Mostek Corp | STMicroelectronics lnc USA |
US6424582B1 | 0.662 | Semiconductor memory device having redundancy | GRANT | 2002-07-23 | 1998-05-27 | 15404054 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US4823302A | 0.662 | Block oriented random access memory able to perform a data read a data write and a data refresh operation in one block-access time | GRANT | 1989-04-18 | 1987-01-30 | 21733144 | Good | RCA Licensing Corp | RCA Licensing Corp |
US5991214A | 0.661 | Circuit and method for varying a period of an internal control signal during a test mode | GRANT | 1999-11-23 | 1996-06-14 | 24663844 | Good | Micron Technology Inc | Micron Technology Inc |
US5970507A | 0.660 | Semiconductor memory device having a refresh-cycle program circuit | GRANT | 1999-10-19 | 1995-12-12 | 18150826 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5321661A | 0.659 | Self-refreshing memory with on-chip timer test circuit | GRANT | 1994-06-14 | 1991-11-20 | 26564169 | Good | Oki Electric Industry Co Ltd | Lapis Semiconductor Co Ltd |
US5867442A | 0.657 | Variable output voltage booster circuits and methods | GRANT | 1999-02-02 | 1995-12-21 | 19442434 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US5583822A | 0.656 | Single chip controller-memory device and a memory architecture and methods suitable for implementing the same | GRANT | 1996-12-10 | 1994-05-09 | 22902907 | Good | Cirrus Logic Inc | Intellectual Ventures II LLC |
US5122988A | 0.655 | Data stream smoothing using a FIFO memory | GRANT | 1992-06-16 | 1989-09-21 | 23626131 | Good | Schlumberger Technologies Inc | Credence Systems Corp, Xcerra Corp |
US5613094A | 0.654 | Method and apparatus for enabling an assembly of non-standard memory components to emulate a standard memory module | GRANT | 1997-03-18 | 1994-10-17 | 23268807 | Good | Smart Modular Technologies Inc | Wells Fargo Capital Finance LLC |
US5345574A | 0.654 | Memory card having controller providing adjustable refresh to a plurality of DRAMs | GRANT | 1994-09-06 | 1990-05-15 | 27524848 | Good | Seiko Epson Corp | Seiko Epson Corp |
US6625077B2 | 0.653 | Asynchronous hidden refresh of semiconductor memory | GRANT | 2003-09-23 | 2001-10-11 | 27615873 | Good | Cascade Semiconductor Corp | Acacia Research Group LLC, Cascade Semiconductor Corp |
US4943960A | 0.653 | Self-refreshing of dynamic random access memory device and operating method therefor | GRANT | 1990-07-24 | 1988-07-19 | 16073689 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US6697910B2 | 0.649 | Semiconductor memory device having refresh circuit | GRANT | 2004-02-24 | 2001-05-28 | 19002101 | Good | Renesas Technology Corp | Renesas Electronics Corp |
US6646943B2 | 0.647 | Virtual static random access memory device and driving method therefor | GRANT | 2003-11-11 | 2001-05-25 | 19709972 | Good | Hynix Semiconductor Inc | SK Hynix Inc |
US5473576A | 0.647 | Dynamic random access memory device with low-power consumption column selector | GRANT | 1995-12-05 | 1993-07-27 | 16150652 | Good | NEC Corp | NEC Electronics Corp |
US6292420B1 | 0.646 | Method and device for automatically performing refresh operation in semiconductor memory device | GRANT | 2001-09-18 | 1999-06-29 | 19597076 | Good | Hyundai Electronics Industries Co Ltd | SK Hynix Inc |
US5894446A | 0.644 | Semiconductor memory device operable with reduced current consumption immediately after power-on | GRANT | 1999-04-13 | 1997-02-14 | 12294207 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US6434064B2 | 0.643 | Semiconductor memory device having redundancy circuit for saving faulty memory cells | GRANT | 2002-08-13 | 2000-06-27 | 18692244 | Good | Toshiba Corp | Toshiba Corp |
US6246619B1 | 0.643 | Self-refresh test time reduction scheme | GRANT | 2001-06-12 | 2000-02-07 | 23983311 | Good | Vanguard International Semiconductor Corp | Taiwan Semiconductor Manufacturing Co TSMC Ltd |
US5748554A | 0.640 | Memory and method for sensing sub-groups of memory elements | GRANT | 1998-05-05 | 1996-12-20 | 25091385 | Good | Rambus Inc | Rambus Inc |
US6826106B2 | 0.640 | Asynchronous hidden refresh of semiconductor memory | GRANT | 2004-11-30 | 2001-10-11 | 28792620 | Good | Cypress Semiconductor Corp | Acacia Research Group LLC |
EP0352768A2 | 0.638 | Semiconductor memory | GRANT | 1990-01-31 | 1988-07-26 | 26503664 | Good | Toshiba Corp | Toshiba Corp |
US5347491A | 0.637 | Dynamic random access memory device having autorefreshing unit for producing internal row address strobe signal and internal column address strobe signal | GRANT | 1994-09-13 | 1991-04-11 | 14489977 | Good | NEC Corp | NEC Electronics Corp |
US5499213A | 0.637 | Semiconductor memory device having self-refresh function | GRANT | 1996-03-12 | 1992-06-29 | 27527807 | Good | Fujitsu VLSI Ltd, Fujitsu Ltd | Fujitsu VLSI Ltd, Fujitsu Ltd |
US5412604A | 0.636 | Semiconductor device using boosted signal | GRANT | 1995-05-02 | 1993-05-31 | 26396252 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US6295243B1 | 0.633 | Semiconductor device | GRANT | 2001-09-25 | 1998-11-30 | 18322766 | Good | Matsushita Electric Industrial Co Ltd | CETUS TECHNOLOGIES INC., Panasonic Holdings Corp |
US6941416B2 | 0.633 | Apparatus and methods for dedicated command port in memory controllers | GRANT | 2005-09-06 | 2001-10-04 | 25518048 | Good | Zilog Inc | IXYS Intl Ltd |
US5631872A | 0.630 | Low power consumption semiconductor dynamic random access memory device by reusing residual electric charge on bit line pairs | GRANT | 1997-05-20 | 1995-08-14 | 16531362 | Good | NEC Corp | NEC Corp |
US6570794B1 | 0.628 | Twisted bit-line compensation for DRAM having redundancy | GRANT | 2003-05-27 | 2001-12-27 | 21877577 | Good | Infineon Technologies North America Corp | Samsung Electronics Co Ltd, International Business Machines Corp |
US6137743A | 0.628 | Semiconductor memory device with reduced consumption of standby current in refresh mode | GRANT | 2000-10-24 | 1998-12-28 | 19566466 | Good | Hyundai Electronics Industries Co Ltd | SK Hynix Inc |
US5751655A | 0.628 | Synchronous type semiconductor memory device having internal operation timings determined by count values of an internal counter | GRANT | 1998-05-12 | 1996-04-22 | 14265566 | Good | Mitsubishi Electric Corp | DRAM MEMORY TECHNOLOGIES LLC, Mitsubishi Electric Corp |
US4393477A | 0.627 | Temperature responsive refresh control circuit | GRANT | 1983-07-12 | 1979-12-11 | 15717494 | Good | Nippon Electric Co Ltd | NEC Corp |
US5970009A | 0.627 | Reduced stand by power consumption in a DRAM | GRANT | 1999-10-19 | 1997-12-30 | 21692321 | Good | Siemens AG, International Business Machines Corp | Infineon Technologies AG, International Business Machines Corp |
US5966725A | 0.627 | Memory refreshing system having selective execution of self and normal refresh operations for a plurality of memory banks | GRANT | 1999-10-12 | 1996-05-13 | 14706837 | Good | International Business Machines Corp | Google LLC |
US4901283A | 0.627 | Dynamic random-access memory system with power-up and power-down refresh circuits | GRANT | 1990-02-13 | 1988-01-22 | 10630396 | Good | Fujitsu Services Ltd | Fujitsu Services Ltd |
US5907857A | 0.626 | Refresh-ahead and burst refresh preemption technique for managing DRAM in computer system | GRANT | 1999-05-25 | 1997-04-07 | 25258678 | Good | OPTi Inc | OPTi Inc |
US5748547A | 0.626 | High performance semiconductor memory devices having multiple dimension bit lines | GRANT | 1998-05-05 | 1996-05-24 | 24621638 | Good | UNIRAM TECHNOLOGIES Inc | UNIRAM TECHNOLOGIES Inc |
US6608783B2 | 0.625 | Twisted bit-line compensation | GRANT | 2003-08-19 | 2001-12-27 | 21877568 | Good | Infineon Technologies North America Corp | Polaris Innovations Ltd |
US5619470A | 0.624 | Non-volatile dynamic random access memory | GRANT | 1997-04-08 | 1994-08-17 | 16306289 | Good | Sharp Corp | Samsung Electronics Co Ltd |
US7290117B2 | 0.622 | Memory having increased data-transfer speed and related systems and methods | GRANT | 2007-10-30 | 2001-12-20 | 21863148 | Good | Hewlett Packard Development Co LP | Hewlett Packard Enterprise Development LP |
US6940774B2 | 0.622 | Integrated dynamic memory and operating method | GRANT | 2005-09-06 | 2001-07-26 | 32231827 | Good | Infineon Technologies AG | Polaris Innovations Ltd |
US20050083721A1 | 0.621 | Granularity memory column access | APPLICATION | 2005-04-21 | 2001-09-07 | 25489136 | Good | ||
US4631701A | 0.620 | Dynamic random access memory refresh control system | GRANT | 1986-12-23 | 1983-10-31 | 24184988 | Good | NCR Corp | NCR Corp |
US6067261A | 0.620 | Timing of wordline activation for DC burn-in of a DRAM with the self-refresh | GRANT | 2000-05-23 | 1998-08-03 | 22431699 | Good | International Business Machines Corp, Infineon Technologies North America Corp | Qimonda AG, International Business Machines Corp, Infineon Technologies North America Corp |
US5497355A | 0.619 | Synchronous address latching for memory arrays | GRANT | 1996-03-05 | 1994-06-03 | 22961934 | Good | Intel Corp | Micron Technology Inc |
US4961167A | 0.618 | Substrate bias generator in a dynamic random access memory with auto/self refresh functions and a method of generating a substrate bias therein | GRANT | 1990-10-02 | 1988-08-26 | 26519660 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5818784A | 0.617 | Semiconductor memory device and memory system | GRANT | 1998-10-06 | 1995-04-26 | 26436033 | Good | Hitachi ULSI Engineering Corp, Hitachi Ltd | Hitachi ULSI Engineering Corp, PS4 Luxco SARL |
US6731552B2 | 0.616 | Integrated dynamic memory and operating method | GRANT | 2004-05-04 | 2001-07-26 | 7693248 | Good | Infineon Technologies AG | Mosaid Technologies Inc, Qimonda AG |
US4570242A | 0.616 | Dynamic random-access memory | GRANT | 1986-02-11 | 1981-10-27 | 15927772 | Good | Nippon Electric Co Ltd | NEC Electronics Corp, NEC Corp |
US6147925A | 0.614 | Semiconductor device allowing fast sensing with a low power supply voltage | GRANT | 2000-11-14 | 1999-01-07 | 11512237 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US5708622A | 0.612 | Clock synchronous semiconductor memory device | GRANT | 1998-01-13 | 1993-09-13 | 26527539 | Good | Mitsubishi Electric Corp | VACHELLIA LLC |
US5717644A | 0.611 | Apparatus for varying the refresh rate for a DRAM in response to variation in operating voltages and method thereof | GRANT | 1998-02-10 | 1996-10-09 | 24924980 | Good | International Business Machines Corp | International Business Machines Corp |
US5416742A | 0.610 | Dynamic random access memory device having sense amplifier circuit arrays sequentially activated | GRANT | 1995-05-16 | 1991-04-15 | 13766987 | Good | NEC Corp | NEC Corp |
US6366516B1 | 0.609 | Memory subsystem employing pool of refresh candidates | GRANT | 2002-04-02 | 2000-12-29 | 25028766 | Good | Intel Corp | Micron Technology Inc |
US6532180B2 | 0.609 | Write data masking for higher speed DRAMs | GRANT | 2003-03-11 | 2001-06-20 | 25383663 | Good | Micron Technology Inc | Round Rock Research LLC |
US5410507A | 0.608 | Special mode control method for dynamic random access memory | GRANT | 1995-04-25 | 1991-11-15 | 26572373 | Good | Hitachi Ltd | Hitachi Ltd |
US5844849A | 0.608 | Dynamic semiconductor memory device having fast operation mode and operating with low current consumption | GRANT | 1998-12-01 | 1995-05-22 | 14835879 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5638317A | 0.606 | Hierarchical DRAM array with grouped I/O lines and high speed sensing circuit | GRANT | 1997-06-10 | 1990-08-22 | 24282104 | Good | Texas Instruments Inc | Texas Instruments Inc |
US5313428A | 0.606 | Field memory self-refreshing device utilizing a refresh clock signal selected from two separate clock signals | GRANT | 1994-05-17 | 1987-11-12 | 27337366 | Good | Sharp Corp | Sharp Corp |
US4870620A | 0.604 | Dynamic random access memory device with internal refresh | GRANT | 1989-09-26 | 1987-01-06 | 26333939 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5712827A | 0.603 | Dynamic type memory | GRANT | 1998-01-27 | 1994-09-22 | 16863701 | Good | Toshiba Corp | Toshiba Corp |
US4710903A | 0.601 | Pseudo-static memory subsystem | GRANT | 1987-12-01 | 1986-03-31 | 25297577 | Good | Wang Laboratories Inc | AMIGA DEVELOPMENT LLC |
US6567340B1 | 0.601 | Memory storage cell based array of counters | GRANT | 2003-05-20 | 1999-09-23 | 46279948 | Good | Netlogic Microsystems Inc | Avago Technologies International Sales Pte Ltd |
US3633175A | 0.599 | DEFECT-TOLERANT DIGITAL MEMORY SYSTEM | GRANT | 1972-01-04 | 1969-05-15 | 25242631 | Good | Honeywell Inc | Honeywell Inc |
US5956281A | 0.598 | Semiconductor memory device capable of setting substrate voltage shallow in disturb test mode and self refresh mode | GRANT | 1999-09-21 | 1997-09-12 | 17182461 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5608683A | 0.597 | Refresh method of reusing electric charge | GRANT | 1997-03-04 | 1995-10-13 | 19430170 | Good | LG Semicon Co Ltd | SK Hynix Inc |
US6629194B2 | 0.597 | Method and apparatus for low power memory bit line precharge | GRANT | 2003-09-30 | 2001-05-31 | 25360703 | Good | Intel Corp | Intel Corp |
US5617555A | 0.597 | Burst random access memory employing sequenced banks of local tri-state drivers | GRANT | 1997-04-01 | 1995-11-30 | 24258367 | Good | Alliance Semiconductor Corp | Advanced Data Access LLC |
US5179667A | 0.597 | Synchronized DRAM control apparatus using two different clock rates | GRANT | 1993-01-12 | 1988-09-14 | 26936768 | Good | Silicon Graphics Inc | Silicon Graphics International Corp, Morgan Stanley and Co LLC |
US5862094A | 0.597 | Semiconductor device and a semiconductor memory device | GRANT | 1999-01-19 | 1996-12-17 | 18307696 | Good | Fujitsu Ltd | Socionext Inc |
US5822753A | 0.595 | Information processing system with a memory control unit for refreshing a memory | GRANT | 1998-10-13 | 1992-10-01 | 27530739 | Good | Hudson Soft Co Ltd | Hudson Soft Co Ltd |
US5625597A | 0.595 | DRAM having test circuit capable of performing function test of refresh counter and measurement of refresh cycle simultaneously | GRANT | 1997-04-29 | 1995-04-04 | 13672645 | Good | Toshiba Corp | Toshiba Corp |
US5335201A | 0.592 | Method for providing synchronous refresh cycles in self-refreshing interruptable DRAMs | GRANT | 1994-08-02 | 1991-04-15 | 24751725 | Good | Micron Technology Inc | Micron Technology Inc |
US4796232A | 0.592 | Dual port memory controller | GRANT | 1989-01-03 | 1987-10-20 | 22338493 | Good | Contel Corp | VERSYSS INCORPORATED A DE CORP |
US5148546A | 0.592 | Method and system for minimizing power demands on portable computers and the like by refreshing selected dram cells | GRANT | 1992-09-15 | 1991-04-22 | 27104351 | Good | Micron Technology Inc | Round Rock Research LLC |
US5633827A | 0.592 | Semiconductor integrated circuit device allowing change of product specification and chip screening method therewith | GRANT | 1997-05-27 | 1991-08-30 | 26523412 | Good | Toshiba Corp | Toshiba Corp |
US5768196A | 0.591 | Shift-register based row select circuit with redundancy for a FIFO memory | GRANT | 1998-06-16 | 1996-03-01 | 24442609 | Good | Cypress Semiconductor Corp | Cypress Semiconductor Corp |
US6141280A | 0.591 | Refresh period automatic detecting device for semiconductor memory device method of automatically detecting refresh period and refresh period output device | GRANT | 2000-10-31 | 1998-12-30 | 19568653 | Good | Hyundai Electronics Industries Co Ltd | SK Hynix Inc |
US5995434A | 0.591 | Dynamic random access memory device having a self-refresh mode | GRANT | 1999-11-30 | 1997-06-25 | 19511166 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US20020078311A1 | 0.589 | Multi-port memory based on DRAM core | APPLICATION | 2002-06-20 | 2000-12-20 | 27531745 | Good | Fujitsu Ltd | Fujitsu Ltd |
US6038186A | 0.588 | Semiconductor memory device that can have power consumption reduced during self refresh mode | GRANT | 2000-03-14 | 1997-09-12 | 17178568 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US5959924A | 0.584 | Method and circuit for controlling an isolation gate in a semiconductor memory device | GRANT | 1999-09-28 | 1997-02-05 | 19496490 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US5208779A | 0.584 | Circuit for providing synchronous refresh cycles in self-refreshing interruptable DRAMs | GRANT | 1993-05-04 | 1991-04-15 | 24752796 | Good | Micron Technology Inc | Micron Technology Inc |
US5615164A | 0.583 | Latched row decoder for a random access memory | GRANT | 1997-03-25 | 1995-06-07 | 23894371 | Good | International Business Machines Corp | GlobalFoundries Inc |
US5617551A | 0.580 | Controller for refreshing a PSRAM using individual automatic refresh cycles | GRANT | 1997-04-01 | 1992-09-18 | 25485679 | Good | New Media Corp | New Media Corp |
US5333128A | 0.579 | Semiconductor memory device having a circuit for reducing frequency of proceeding refresh in data retention mode | GRANT | 1994-07-26 | 1991-07-16 | 26628683 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US5995433A | 0.578 | Three-transistor type DRAM with a refresh circuit | GRANT | 1999-11-30 | 1998-05-22 | 22178330 | Good | Taiwan Semiconductor Manufacturing Co TSMC Ltd | Taiwan Semiconductor Manufacturing Co TSMC Ltd |
US6134180A | 0.578 | Synchronous burst semiconductor memory device | GRANT | 2000-10-17 | 1998-08-04 | 19546549 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US6141278A | 0.577 | Semiconductor memory device allowing fast successive selection of word lines in a test mode operation | GRANT | 2000-10-31 | 1995-02-21 | 12347707 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
EP0284276A2 | 0.577 | Selective power gating | GRANT | 1988-09-28 | 1987-03-16 | 21828752 | Good | ||
US6807122B2 | 0.576 | Semiconductor memory device requiring refresh | GRANT | 2004-10-19 | 2001-11-14 | 29420968 | Good | Hitachi Ltd | Hitachi Ltd |
US6577550B2 | 0.576 | Control circuit and semiconductor memory device | GRANT | 2003-06-10 | 2001-04-06 | 18960826 | Good | Fujitsu Ltd | Socionext Inc |
US6118719A | 0.575 | Self-initiated self-refresh mode for memory modules | GRANT | 2000-09-12 | 1998-05-20 | 22165423 | Good | International Business Machines Corp | Cavium International, Marvell Asia Pte Ltd |
US5802555A | 0.573 | Computer system including a refresh controller circuit having a row address strobe multiplexer and associated method | GRANT | 1998-09-01 | 1995-03-15 | 23600687 | Good | Texas Instruments Inc | Texas Instruments Inc |
US5634106A | 0.573 | Power saving system and method for refreshing a computer memory by switching between interval refresh and self-refresh operations | GRANT | 1997-05-27 | 1993-12-24 | 18177765 | Good | Toshiba Corp | Toshiba Corp |
US5901101A | 0.572 | Semiconductor memory device | GRANT | 1999-05-04 | 1996-08-29 | 26522677 | Good | Fujitsu Ltd | Socionext Inc |
US6081472A | 0.572 | Cell refresh circuit of memory device | GRANT | 2000-06-27 | 1997-02-18 | 19497357 | Good | LG Semicon Co Ltd | SK Hynix Inc |
US6295238B1 | 0.572 | Semiconductor memory device having a circuit for fast operation | GRANT | 2001-09-25 | 1999-06-28 | 26501169 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US5278792A | 0.570 | Semiconductor memory device with dummy cycle operation | GRANT | 1994-01-11 | 1991-01-28 | 11698897 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5247655A | 0.567 | Sleep mode refresh apparatus | GRANT | 1993-09-21 | 1989-11-07 | 23717161 | Good | Chips and Technologies LLC | Intel Corp |
US5574679A | 0.567 | Memory data protection for a ferroelectric memory | GRANT | 1996-11-12 | 1994-10-27 | 17393790 | Good | NEC Corp | NEC Corp |
US6137742A | 0.567 | Semiconductor memory device having self-refresh control circuit | GRANT | 2000-10-24 | 1998-10-14 | 19554038 | Good | Hyundai Electronics Industries Co Ltd | SK Hynix Inc |
US6396758B2 | 0.564 | Semiconductor memory device | GRANT | 2002-05-28 | 2000-02-29 | 18576080 | Good | Fujitsu Ltd | Socionext Inc |
US4977537A | 0.563 | Dram nonvolatizer | GRANT | 1990-12-11 | 1988-09-23 | 22941011 | Good | Dallas Semiconductor Corp | Dallas Semiconductor Corp |
US5638529A | 0.562 | Variable refresh intervals for system devices including setting the refresh interval to zero | GRANT | 1997-06-10 | 1992-08-24 | 25466048 | Good | Intel Corp | Intel Corp |
US6178130B1 | 0.559 | Apparatus and method for refreshing subsets of memory devices in a memory system | GRANT | 2001-01-23 | 1997-10-10 | 26741349 | Good | Rambus Inc, Intel Corp | Rambus Inc, Intel Corp |
US6560154B1 | 0.559 | Semiconductor integrated circuit device | GRANT | 2003-05-06 | 1999-05-14 | 14235688 | Good | Hitachi Ltd | Hitachi Ltd |
US5909703A | 0.558 | Method and apparatus for banking addresses for DRAMS | GRANT | 1999-06-01 | 1997-03-07 | 25213211 | Good | Advanced Micro Devices Inc | GlobalFoundries Inc, AMD Technologies Holdings Inc |
US20040174757A1 | 0.558 | Content addressable control system | APPLICATION | 2004-09-09 | 2001-01-26 | 27401686 | Good | Lumentum Operations LLC | Lumentum Operations LLC |
US6442667B1 | 0.558 | Selectively powering X Y organized memory banks | GRANT | 2002-08-27 | 1998-06-08 | 26778670 | Good | Texas Instruments Inc | Texas Instruments Inc |
US20020131301A1 | 0.556 | GLOBAL/LOCAL MEMORY DECODE WITH INDEPENDENT PROGRAM AND READ PATHS AND SHARED LOCAL DECODE | APPLICATION | 2002-09-19 | 2001-03-15 | 25201291 | Good | Intel Corp | Intel Corp |
US4984209A | 0.554 | Burst refresh of dynamic random access memory for personal computers | GRANT | 1991-01-08 | 1987-10-30 | 22357320 | Good | Zenith Data Systems Corp | NEC Corp |
US20030123301A1 | 0.553 | Semiconductor memory device post-repair circuit and method | APPLICATION | 2003-07-03 | 2001-12-28 | 19717814 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US20030043675A1 | 0.553 | Memory system | APPLICATION | 2003-03-06 | 2001-09-06 | 7697963 | Good | ||
US6262931B1 | 0.551 | Semiconductor memory device having voltage down convertor reducing current consumption | GRANT | 2001-07-17 | 1999-08-31 | 17127890 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US6885606B2 | 0.550 | Synchronous semiconductor memory device with a plurality of memory banks and method of controlling the same | GRANT | 2005-04-26 | 2002-01-29 | 27615716 | Good | Toshiba Corp | Toshiba Corp |
US6480931B1 | 0.549 | Content addressable storage apparatus and register mapper architecture | GRANT | 2002-11-12 | 1999-11-05 | 23725771 | Good | International Business Machines Corp | LinkedIn Corp |
US6260101B1 | 0.549 | Microcontroller having dedicated hardware for memory address space expansion supporting both static and dynamic memory devices | GRANT | 2001-07-10 | 1997-03-07 | 25212930 | Good | Advanced Micro Devices Inc | GlobalFoundries Inc |
US6424586B1 | 0.548 | Semiconductor integrated circuit device and method of activating same | GRANT | 2002-07-23 | 1995-12-21 | 18405636 | Good | Hitachi Ltd | Longitude Semiconductor SARL |
US6134167A | 0.547 | Reducing power consumption in computer memory | GRANT | 2000-10-17 | 1998-06-04 | 22222718 | Good | Compaq Computer Corp | Hewlett Packard Development Co LP |
US6079023A | 0.547 | Multi-bank memory devices having common standby voltage generator for powering a plurality of memory array banks in response to memory array bank enable signals | GRANT | 2000-06-20 | 1997-12-30 | 19529663 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
EP2083423A1 | 0.546 | Semiconductor memory device and method of controlling the same | GRANT | 2009-07-29 | 1999-11-09 | 26569375 | Good | Fujitsu Semiconductor Ltd | Fujitsu Semiconductor Ltd |
US20020181272A1 | 0.542 | Semiconductor memory device | APPLICATION | 2002-12-05 | 2001-06-01 | 19009165 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US4985868A | 0.541 | Dynamic random access memory having improved refresh timing | GRANT | 1991-01-15 | 1986-08-27 | 16399465 | Good | Fujitsu VLSI Ltd, Fujitsu Ltd | Fujitsu VLSI Ltd, Fujitsu Ltd |
US5881314A | 0.541 | Memory control circuit and method for a CD-ROM driving system | GRANT | 1999-03-09 | 1995-10-30 | 19432013 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US6469948B2 | 0.541 | Semiconductor device | GRANT | 2002-10-22 | 1999-12-08 | 18396808 | Good | Hitachi Ltd | Renesas Electronics Corp |
US5793776A | 0.540 | Structure and method for SDRAM dynamic self refresh entry and exit using JTAG | GRANT | 1998-08-11 | 1996-10-18 | 24949222 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US4725945A | 0.539 | Distributed cache in dynamic rams | GRANT | 1988-02-16 | 1984-09-18 | 24613332 | Good | International Business Machines Corp | International Business Machines Corp |
US6317381B1 | 0.537 | Method and system for adaptively adjusting control signal timing in a memory device | GRANT | 2001-11-13 | 1999-12-07 | 23816695 | Good | Micron Technology Inc | Micron Technology Inc |
US6363024B1 | 0.536 | Method for carrying out auto refresh sequences on a DRAM | GRANT | 2002-03-26 | 1999-11-18 | 7929543 | Good | Infineon Technologies AG | Polaris Innovations Ltd |
US5953280A | 0.535 | Bank selection for synchronous readable and writable semiconductor memory | GRANT | 1999-09-14 | 1996-03-25 | 13377998 | Good | NEC Corp | Longitude Semiconductor SARL |
US6038622A | 0.534 | Peripheral access with synchronization feature | GRANT | 2000-03-14 | 1993-09-29 | 22440404 | Good | Texas Instruments Inc | Texas Instruments Inc |
US5654929A | 0.534 | Refresh strategy for DRAMs | GRANT | 1997-08-05 | 1995-09-14 | 24103635 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US5659517A | 0.534 | Semiconductor memory device with an improved hierarchical power supply line configuration | GRANT | 1997-08-19 | 1994-09-09 | 16676042 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US5933381A | 0.532 | Semiconductor integrated circuit having DRAM mounted on semiconductor chip | GRANT | 1999-08-03 | 1997-09-25 | 17339511 | Good | Mitsubishi Electric Corp | Advanced Processor Technologies LLC |
US5146592A | 0.531 | High speed image processing computer with overlapping windows-div | GRANT | 1992-09-08 | 1987-09-14 | 26793510 | Good | Visual Information Technologies Inc | BAE Systems National Security Solutions Inc |
US5121358A | 0.531 | SEMICONDUCTOR MEMORY WITH POWER-ON RESET CONTROLLED LATCHED ROW LINE REPEATERS | GRANT | 1992-06-09 | 1990-09-26 | 24354570 | Good | SGS Thomson Microelectronics Inc | STMicroelectronics lnc USA |
US5751645A | 0.530 | Semiconductor memory device with reduced output noise | GRANT | 1998-05-12 | 1996-05-14 | 14751053 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5969995A | 0.528 | Static semiconductor memory device having active mode and sleep mode | GRANT | 1999-10-19 | 1998-02-03 | 12069837 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US5881016A | 0.527 | Method and apparatus for optimizing power consumption and memory bandwidth in a video controller using SGRAM and SDRAM power reduction modes | GRANT | 1999-03-09 | 1997-06-13 | 25364273 | Good | Cirrus Logic Inc | Nvidia Corp |
US6829677B1 | 0.526 | Method and apparatus for preserving the contents of synchronous DRAM through system reset | GRANT | 2004-12-07 | 2000-05-18 | 24295034 | Good | International Business Machines Corp | Cavium International, Marvell Asia Pte Ltd |
US6975551B2 | 0.526 | Semiconductor storage mobile electronic device and detachable storage | GRANT | 2005-12-13 | 2001-07-10 | 19045154 | Good | Sharp Corp | Sharp Corp |
US5796675A | 0.525 | Synchronous memory device having dual input registers of pipeline structure in data path | GRANT | 1998-08-18 | 1996-02-08 | 19450962 | Good | Hyundai Electronics Industries Co Ltd | Mosaid Technologies Inc |
US5563839A | 0.524 | Semiconductor memory device having a sleep mode | GRANT | 1996-10-08 | 1995-03-30 | 23636939 | Good | Agiga Tech Inc | RPX Corp |
US5557577A | 0.524 | System and method for performing wake-up operations to a memory | GRANT | 1996-09-17 | 1995-05-01 | 23718074 | Good | Apple Computer Inc | Apple Inc |
US6286120B1 | 0.523 | Memory architecture for automatic test equipment using vector module table | GRANT | 2001-09-04 | 1994-09-01 | 23156144 | Good | Teradyne Inc | Teradyne Inc |
US20040057317A1 | 0.523 | Low power memory module using restricted device activation | APPLICATION | 2004-03-25 | 1990-10-31 | 24435148 | Good | Round Rock Research LLC | Round Rock Research LLC |
US7500075B1 | 0.521 | Mechanism for enabling full data bus utilization without increasing data granularity | GRANT | 2009-03-03 | 2001-04-17 | 40385481 | Good | Rambus Inc | Rampart Asset Management LLC |
US5475645A | 0.519 | Memory module using dram and method of refreshing the memory module | GRANT | 1995-12-12 | 1993-05-27 | 15519130 | Good | Seiko Epson Corp | Seiko Epson Corp, Buffalo Inc |
US5696917A | 0.518 | Method and apparatus for performing burst read operations in an asynchronous nonvolatile memory | GRANT | 1997-12-09 | 1994-06-03 | 22960536 | Good | Intel Corp | Intel Corp |
US5544120A | 0.518 | Semiconductor integrated circuit including ring oscillator of low current consumption | GRANT | 1996-08-06 | 1993-04-07 | 13730184 | Good | Toshiba Corp | Toshiba Corp |
US5822265A | 0.518 | DRAM controller with background refresh | GRANT | 1998-10-13 | 1997-07-29 | 25414995 | Good | Rockwell Semiconductor Systems Inc | Rockwell Firstpoint Contact Corp, Wilmington Trust NA |
US5557578A | 0.517 | Dynamic memory refresh controller and method | GRANT | 1996-09-17 | 1995-05-01 | 23718108 | Good | Apple Computer Inc | Apple Inc |
US5148535A | 0.514 | Non-bus request refresh system for shortening refresh timing | GRANT | 1992-09-15 | 1989-08-31 | 23587366 | Good | Tandy Corp | Samsung Electronics Co Ltd |
US5699297A | 0.513 | Method of rewriting data in a microprocessor additionally provided with a flash memory | GRANT | 1997-12-16 | 1995-05-30 | 15066136 | Good | Toshiba Corp | Toshiba Corp |
US6088762A | 0.512 | Power failure mode for a memory controller | GRANT | 2000-07-11 | 1998-06-19 | 22278725 | Good | Intel Corp | Intel Corp |
US20030081483A1 | 0.512 | DRAM REFRESH COMMAND OPERATION | APPLICATION | 2003-05-01 | 2001-09-19 | 9922328 | Good | 3Com Corp, Hewlett Packard Development Co LP | HP Inc, Hewlett Packard Development Co LP, Individual |
US6327640B1 | 0.508 | Overlapping peripheral chip select space with DRAM on a microcontroller with an integrated DRAM controller | GRANT | 2001-12-04 | 1997-03-07 | 25213217 | Good | Advanced Micro Devices Inc | GlobalFoundries Inc |
US5568440A | 0.507 | Semiconductor memory device having self-refreshing function | GRANT | 1996-10-22 | 1994-02-03 | 26347423 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US5153856A | 0.506 | DRAM controller | GRANT | 1992-10-06 | 1989-02-10 | 12354127 | Good | Tokyo Electric Co Ltd | Toshiba TEC Corp |
US5594699A | 0.506 | DRAM with reduced electric power consumption | GRANT | 1997-01-14 | 1993-09-20 | 26342339 | Good | Fujitsu VLSI Ltd, Fujitsu Ltd | Fujitsu VLSI Ltd, Fujitsu Semiconductor Ltd |
US5586287A | 0.502 | Information processing apparatus capable of holding storage contents of PSRAM even when system clock comes to abnormal halt | GRANT | 1996-12-17 | 1994-05-13 | 14267120 | Good | Sharp Corp | Sharp Corp |
US6515930B2 | 0.501 | Dram cell reading method and device | GRANT | 2003-02-04 | 2001-04-30 | 8862857 | Good | STMicroelectronics SA | STMicroelectronics SA, Cutera Inc |
US6744437B2 | 0.500 | Data processing apparatus having DRAM incorporated therein | GRANT | 2004-06-01 | 1996-03-21 | 22501826 | Good | Renesas Technology Corp | Renesas Electronics Corp |
US6434078B1 | 0.499 | Semiconductor device allowing external setting of internal power supply voltage generated by a voltage down converter at the time of testing | GRANT | 2002-08-13 | 1997-11-28 | 18208951 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US5640357A | 0.499 | Storage device using dynamic RAM | GRANT | 1997-06-17 | 1994-12-02 | 17868999 | Good | Fujitsu Ltd | Fujitsu Ltd |
US6275439B1 | 0.496 | Power supply control apparatus for changing power line connection type in response to operation mode in semiconductor memory device | GRANT | 2001-08-14 | 1999-06-28 | 19596209 | Good | Hyundai Electronics Industries Co Ltd | SK Hynix Inc |
US5623450A | 0.496 | Conditional recharge for dynamic logic | GRANT | 1997-04-22 | 1995-09-08 | 24093285 | Good | International Business Machines Corp | International Business Machines Corp |
US6404687B2 | 0.494 | Semiconductor integrated circuit having a self-refresh function | GRANT | 2002-06-11 | 1999-10-27 | 17948355 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5197026A | 0.494 | Transparent EEPROM backup of DRAM memories | GRANT | 1993-03-23 | 1989-04-13 | 23322766 | Good | Microchip Technology Inc | Microchip Technology Inc |
US5726946A | 0.490 | Semiconductor integrated circuit device having hierarchical power source arrangement | GRANT | 1998-03-10 | 1994-06-02 | 27284328 | Good | Mitsubishi Electric Corp | VACHELLIA LLC |
US5432747A | 0.485 | Self-timing clock generator for precharged synchronous SRAM | GRANT | 1995-07-11 | 1994-09-14 | 23183787 | Good | Unisys Corp | Unisys Corp |
US6947347B2 | 0.483 | Semiconductor memory device and method of controlling the same | GRANT | 2005-09-20 | 1999-11-09 | 46257655 | Good | Fujitsu Ltd | Socionext Inc |
US5845108A | 0.483 | Semiconductor memory device using asynchronous signal | GRANT | 1998-12-01 | 1995-12-22 | 19443316 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US7006067B2 | 0.482 | Display device | GRANT | 2006-02-28 | 2001-05-30 | 19005193 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US6122215A | 0.477 | DRAM having a power supply voltage lowering circuit | GRANT | 2000-09-19 | 1995-01-20 | 11658051 | Good | Toshiba Corp | Toshiba Corp |
US6334167B1 | 0.476 | System and method for memory self-timed refresh for reduced power consumption | GRANT | 2001-12-25 | 1998-08-31 | 22509271 | Good | International Business Machines Corp | International Business Machines Corp |
US5966731A | 0.472 | Protocol for communication with dynamic memory | GRANT | 1999-10-12 | 1995-10-19 | 24175641 | Good | Rambus Inc | Rambus Inc |
US4984216A | 0.465 | Operation mode setting circuit for dram | GRANT | 1991-01-08 | 1988-02-12 | 12304018 | Good | Toshiba Corp | Toshiba Corp |
US20100321983A1 | 0.465 | SEMICONDUCTOR MEMORY DEVICE CAPABLE OF DRIVING NON-SELECTED WORD LINES TO FIRST AND SECOND POTENTIALS | APPLICATION | 2010-12-23 | 1998-06-29 | 27325120 | Good | Fujitsu Semiconductor Ltd | Fujitsu Semiconductor Ltd |
US6021082A | 0.464 | Semiconductor memory device including an internal power supply circuit having standby and activation mode | GRANT | 2000-02-01 | 1997-12-05 | 18293374 | Good | Toshiba Corp | Kioxia Corp |
EP0855718A1 | 0.463 | Memory low power mode control | GRANT | 1998-07-29 | 1997-01-28 | 8229945 | Good | Hewlett Packard Co | HP Inc |
US6198648B1 | 0.462 | Semiconductor memory device with hierarchical bit line architecture | GRANT | 2001-03-06 | 1998-12-01 | 18352177 | Good | Sharp Corp | Sharp Corp |
US5172341A | 0.462 | Serial dram controller with multi generation interface | GRANT | 1992-12-15 | 1990-01-19 | 27043354 | Good | Dallas Semiconductor Corp | Dallas Semiconductor Corp |
US5990730A | 0.457 | Semiconductor device with stable operation and reduced power consumption | GRANT | 1999-11-23 | 1998-02-03 | 12077705 | Good | Fujitsu Ltd | Socionext Inc |
US7320082B2 | 0.455 | Power control system for synchronous memory device | GRANT | 2008-01-15 | 1997-10-10 | 22037289 | Good | Rambus Inc | Rambus Inc |
US6535447B2 | 0.454 | Semiconductor memory device and voltage level control method thereof | GRANT | 2003-03-18 | 2000-11-30 | 19702492 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US6574161B2 | 0.453 | Semiconductor integrated circuit device having a hierarchical power source configuration | GRANT | 2003-06-03 | 1994-11-07 | 17516071 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US5696729A | 0.448 | Power reducing circuit for synchronous semiconductor device | GRANT | 1997-12-09 | 1993-12-17 | 18090785 | Good | NEC Corp | PS4 Luxco SARL |
US5530965A | 0.445 | Multiply connectable microprocessor and microprocessor system | GRANT | 1996-06-25 | 1992-11-06 | 18145497 | Good | Hitachi ULSI Engineering Corp, Hitachi Microcomputer System Ltd, Hitachi Ltd | Hitachi ULSI Engineering Corp, Hitachi Microcomputer System Ltd, Renesas Electronics Corp |
US6216233B1 | 0.442 | Maintaining a memory while in a power management mode | GRANT | 2001-04-10 | 1997-02-12 | 25172127 | Good | Intel Corp | Intel Corp |
US20010040833A1 | 0.439 | METHOD AND APPARATUS FOR SELF TIMING REFRESH | APPLICATION | 2001-11-15 | 1998-12-04 | 22760743 | Good | Intel Corp | Intel Corp |
US20030090400A1 | 0.437 | MULTI-OUTPUT DAC AND METHOD USING SINGLE DAC AND MULTIPLE S/H CIRCUITS | APPLICATION | 2003-05-15 | 2001-11-09 | 26831627 | Good | Texas Instruments Inc | Texas Instruments Inc |
US6157589A | 0.434 | Dynamic semiconductor memory device and method for initializing a dynamic semiconductor memory device | GRANT | 2000-12-05 | 1998-06-30 | 7872570 | Good | Siemens AG | Siemens AG, Polaris Innovations Ltd |
US5195182A | 0.432 | Frame buffer architecture for storing sequential data in alternating memory banks | GRANT | 1993-03-16 | 1989-04-03 | 23295919 | Good | Eastman Kodak Co | Eastman Kodak Co |
US5495448A | 0.431 | Memory testing through cumulative word line activation | GRANT | 1996-02-27 | 1994-03-09 | 8216695 | Good | US Philips Corp | US Philips Corp |
US5404543A | 0.429 | Method and system for reducing an amount of power utilized by selecting a lowest power mode from a plurality of power modes | GRANT | 1995-04-04 | 1992-05-29 | 25398062 | Good | International Business Machines Corp | International Business Machines Corp |
US5495452A | 0.426 | Circuit for controlling a self-refresh period in a semiconductor memory device | GRANT | 1996-02-27 | 1993-07-14 | 19359275 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US6317657B1 | 0.423 | Method to battery back up SDRAM data on power failure | GRANT | 2001-11-13 | 1998-08-18 | 22472038 | Good | International Business Machines Corp | Seagate Systems UK Ltd |
US6738861B2 | 0.423 | System and method for managing data in memory for reducing power consumption | GRANT | 2004-05-18 | 2001-09-20 | 25499484 | Good | Intel Corp | Intel Corp |
US6742097B2 | 0.418 | Consolidation of allocated memory to reduce power consumption | GRANT | 2004-05-25 | 2001-07-30 | 25441970 | Good | Rambus Inc | Rambus Inc |
US6157366A | 0.418 | Circuits systems and methods for graphics and video window/display data block transfer via dedicated memory control | GRANT | 2000-12-05 | 1994-12-06 | 23374419 | Good | Cirrus Logic Inc | Intellectual Ventures II LLC |
US5610869A | 0.417 | Semiconductor memory device | GRANT | 1997-03-11 | 1992-12-02 | 19344587 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US6292424B1 | 0.415 | DRAM having a power supply voltage lowering circuit | GRANT | 2001-09-18 | 1995-01-20 | 27518786 | Good | Toshiba Corp | Toshiba Corp |
US6067269A | 0.404 | Semiconductor memory device capable of operating at a low power supply voltage | GRANT | 2000-05-23 | 1997-12-31 | 19530481 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US5216635A | 0.402 | System and method for requesting access to a computer memory for refreshing | GRANT | 1993-06-01 | 1991-07-24 | 24954521 | Good | NCR Corp | NCR Corp |
US6031782A | 0.402 | Semiconductor memory device provided with an interface circuit consuming a reduced amount of current consumption | GRANT | 2000-02-29 | 1998-01-16 | 11640149 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US6243315B1 | 0.401 | Computer memory system with a low power down mode | GRANT | 2001-06-05 | 1999-12-31 | 23897868 | Good | ||
US5710933A | 0.393 | System resource enable apparatus | GRANT | 1998-01-20 | 1995-03-31 | 23643275 | Good | International Business Machines Corp | International Business Machines Corp |
US20020026613A1 | 0.384 | Semiconductor device capable of adjusting timing of input waveform by tester with high accuracy | APPLICATION | 2002-02-28 | 2000-08-28 | 18746165 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
EP0910089A2 | 0.379 | Storage circuit having backup function and information processing apparatus | GRANT | 1999-04-21 | 1997-10-16 | 17671012 | Good | Fujitsu Ltd | Fujitsu Ltd |
US5345424A | 0.377 | Power-up reset override architecture and circuit for flash memory | GRANT | 1994-09-06 | 1993-06-30 | 22192978 | Good | Intel Corp | Intel Corp |
US6647503B1 | 0.375 | Microcomputer with re-initialization of DRAM or SRAM using non-volatile memory | GRANT | 2003-11-11 | 2000-02-29 | 18575328 | Good | Mitsubishi Electric Corp | Renesas Electronics Corp |
US6981159B2 | 0.373 | Memory control device having less power consumption for backup | GRANT | 2005-12-27 | 2001-02-23 | 18908919 | Good | Canon Inc | Canon Inc |
US6715116B2 | 0.367 | Memory data verify operation | GRANT | 2004-03-30 | 2000-01-26 | 26873977 | Good | Hewlett Packard Co | SK Hynix Inc, HP Inc |
US6260149B1 | 0.367 | Method and apparatus for logic and power isolation during power management | GRANT | 2001-07-10 | 1997-02-12 | 25172138 | Good | Intel Corp | Intel Corp |
US5903513A | 0.365 | Semiconductor integrated circuit device with clock frequency invariant voltage step-down circuit | GRANT | 1999-05-11 | 1997-03-26 | 13511219 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US7039838B2 | 0.360 | Method for testing a circuit unit to be tested and test apparatus | GRANT | 2006-05-02 | 2001-07-27 | 7693344 | Good | Infineon Technologies AG | Polaris Innovations Ltd |
US6823424B2 | 0.359 | Rebuild bus utilization | GRANT | 2004-11-23 | 2000-01-26 | 46278242 | Good | Hewlett Packard Development Co LP | SK Hynix Inc |
US5870345A | 0.358 | Temperature independent oscillator | GRANT | 1999-02-09 | 1997-09-04 | 25448469 | Good | Siemens AG | Polaris Innovations Ltd |
US5689677A | 0.351 | Circuit for enhancing performance of a computer for personal use | GRANT | 1997-11-18 | 1995-06-05 | 23843392 | Good | ||
US6373738B1 | 0.350 | Low power CAM match line circuit | GRANT | 2002-04-16 | 2000-11-20 | 24878285 | Good | International Business Machines Corp | International Business Machines Corp |
US6775784B1 | 0.344 | Power supply control circuit and method for cutting off unnecessary power to system memory in the power-off state | GRANT | 2004-08-10 | 1999-10-25 | 19616814 | Good | Samsung Electronics Co Ltd | Samsung Electronics Co Ltd |
US6771558B2 | 0.335 | Semiconductor memory device | GRANT | 2004-08-03 | 2001-12-21 | 19717373 | Good | Hynix Semiconductor Inc | SK Hynix Inc |
US5682548A | 0.335 | Interface component for coupling main bus of computer system to peripheral ports having windows each includes bit specifying whether operations are quiet or not quiet | GRANT | 1997-10-28 | 1993-08-12 | 22307009 | Good | Databook Inc | Databook Inc |
US5663984A | 0.333 | High performance bus driving/receiving circuits systems and methods | GRANT | 1997-09-02 | 1995-05-04 | 23725106 | Good | Cirrus Logic Inc | Intellectual Ventures II LLC |
US5291198A | 0.330 | Averaging flash analog-to-digital converter | GRANT | 1994-03-01 | 1992-03-16 | 10712246 | Good | Electronics Res and Service Org, Industrial Technology Research Institute ITRI, David Sarnoff Research Center Inc | Electronics Res and Service Org, Industrial Technology Research Institute ITRI, Sarnoff Corp |
US5485625A | 0.314 | Method and apparatus for monitoring external events during a microprocessor's sleep mode | GRANT | 1996-01-16 | 1992-06-29 | 25422058 | Good | Ford Motor Co | Visteon Global Technologies Inc |
US6885605B2 | 0.307 | Power-up signal generator for semiconductor memory devices | GRANT | 2005-04-26 | 2001-12-21 | 19717371 | Good | Hynix Semiconductor Inc | SK Hynix Inc |
US6925024B2 | 0.307 | Zero power chip standby mode | GRANT | 2005-08-02 | 2001-08-30 | 25478789 | Good | Micron Technology Inc | Round Rock Research LLC |
US20020007476A1 | 0.295 | STORAGE | APPLICATION | 2002-01-17 | 1997-09-29 | 17388953 | Good | NEC Corp | NEC Corp |
US6518813B1 | 0.272 | Clock generating circuit and semiconductor integrated circuit using the same | GRANT | 2003-02-11 | 1999-01-29 | 12106602 | Good | Seiko Epson Corp | Seiko Epson Corp |
EP1293985A1 | 0.256 | DATA BACKUP DEVICE AND STEP-UP/STEP-DOWN POWER SUPPLY | GRANT | 2003-03-19 | 2000-06-08 | 11736130 | Good | Mitsubishi Electric Corp | Mitsubishi Electric Corp |
US5748968A | 0.253 | Requesting device capable of canceling its memory access requests upon detecting other specific requesting devices simultaneously asserting access requests | GRANT | 1998-05-05 | 1996-01-05 | 24332921 | Good | Cirrus Logic Inc | Nvidia Corp |
US20050198460A1 | 0.247 | System and method for managing memory compression transparent to an operating system | APPLICATION | 2005-09-08 | 2001-02-13 | 25126224 | Good | International Business Machines Corp | Meta Platforms Inc |
US6105138A | 0.231 | Method and apparatus for controlling electric source in information processing system | GRANT | 2000-08-15 | 1996-01-31 | 11870688 | Good | Hitachi Ltd, Hitachi Chubu Software Ltd, Hitachi Asahi Electronics Co Ltd | Hitachi Ltd, Hitachi Chubu Software Ltd, Hitachi Asahi Electronics Co Ltd |
US6324651B2 | 0.220 | Method and apparatus for saving device state while a computer system is in sleep mode | GRANT | 2001-11-27 | 1998-11-12 | 22701848 | Good | International Business Machines Corp | Lenovo PC International Ltd |
KR100255259B1 | NR | CIRCUITS SYSTEMS AND METHODS FOR INTERFACING PROCESSING CIRCUITRY WITH A MEMORY | GRANT | 2000-05-01 | 1995-11-02 | 24204329 | Good | ||
JPS6427094A | NR | MOS-TYPE SEMICONDUCTOR MEMORY | GRANT | 1989-01-30 | 1987-07-23 | 16168394 | Good | ||
JPS5987695A | NR | SEMICONDUCTOR MEMORY DEVICE | GRANT | 1984-05-21 | 1982-11-11 | 16386998 | Good | ||
JPS59167898A | NR | MEMORY CIRCUIT | GRANT | 1984-09-21 | 1983-03-14 | 12614888 | Good | ||
JPS5727491A | NR | REFRESH CONTROLLER | GRANT | 1982-02-13 | 1980-07-24 | 14303261 | Good | ||
JPS55105893A | NR | DRIVING UNIT OF DYNAMIC MEMORY | GRANT | 1980-08-13 | 1979-01-31 | 11770423 | Good | ||
JPH10255468A | NR | REFRESH DEVICE FOR DRAM | GRANT | 1998-09-25 | 1997-03-12 | 13060928 | Good | ||
JPH09128965A | NR | SEMICONDUCTOR MEMORY | GRANT | 1997-05-16 | 1995-10-27 | 17923356 | Good | ||
JPH07220469A | NR | SEMICONDUCTOR MEMORY DEVICE | GRANT | 1995-08-18 | 1994-02-04 | 12374332 | Good | ||
JPH03149867A | NR | SEMICONDUCTOR INTEGRATED CIRCUIT | GRANT | 1991-06-26 | 1989-11-07 | 17739011 | Good | ||
GB2375865A | NR | Cell data protection whilst refreshing memory | GRANT | 2002-11-27 | 2001-05-25 | 19709970 | Good | Hynix Semiconductor Inc | SK Hynix Inc |
CN1195173A | NR | Flexible fuse placement in redundant semiconductor memory | GRANT | 1998-10-07 | 1997-03-28 | 25243679 | Good | ||
CN101038785A | NR | A high speed dram architecture with uniform access latency | GRANT | 2007-09-19 | 2000-07-07 | 4166723 | Good | ||
US6055289A | 0.657 | Shared counter | GRANT | 2000-04-25 | 1996-01-30 | 24374934 | Fair | Micron Technology Inc | Micron Technology Inc |
US6352868B1 | 0.562 | Method and apparatus for wafer level burn-in | GRANT | 2002-03-05 | 2000-01-19 | 21658531 | Fair | Advanced Chip Engineering Technology Inc | Advanced Chip Engineering Technology Inc |
US7113208B1 | 0.439 | Image processing apparatus image processing method and recording medium | GRANT | 2006-09-26 | 1998-02-24 | 37018924 | Fair | Canon Inc | Canon Inc |
US5530392A | 0.302 | Bus driver/receiver circuitry and systems and methods using the same | GRANT | 1996-06-25 | 1995-04-11 | 23665236 | Fair | Cirrus Logic Inc | Intellectual Ventures II LLC |
US6306721B1 | 0.174 | Method of forming salicided poly to metal capacitor | GRANT | 2001-10-23 | 2001-03-16 | 25200138 | Fair | Chartered Semiconductor Manufacturing Pte Ltd | GlobalFoundries Singapore Pte Ltd |
US6949963B2 | 0.162 | Line driver with current source output and high immunity to RF signals | GRANT | 2005-09-27 | 2001-03-12 | 8179994 | Fair | Koninklijke Philips Electronics NV | Future Link Systems LLC |
US20010008438A1 | 0.157 | Pixel array for LC silicon light valve featuring pixels with overlapping edges | APPLICATION | 2001-07-19 | 1999-03-29 | 23074484 | Fair | ||
US8936573B2 | 0.152 | Infusion pump having missed bolus alarm | GRANT | 2015-01-20 | 2002-02-28 | 27753923 | Fair | Smiths Medical ASD Inc | Smiths Medical ASD Inc |
US20030105092A1 | 0.047 | Prevention of loss and restoration of bone mass by certain prostaglandin agonists | APPLICATION | 2003-06-05 | 1996-12-20 | 21870485 | Fair | ||
US5643533A | 0.027 | Method of packaged goods sterilization | GRANT | 1997-07-01 | 1995-05-12 | 23746049 | Fair | ||
US20050226820A1 | 0.023 | Non-crystalline saliva-soluble coatings for elastomeric monofilament dental tapes | APPLICATION | 2005-10-13 | 2001-01-22 | 23000868 | Fair | WhiteHill Oral Technologies Inc | WhiteHill Oral Technologies Inc |
US5338282A | 0.010 | Automatic trimming machine | GRANT | 1994-08-16 | 1993-03-23 | 21882822 | Fair | ||
US1158364A | NR | PROCESS OF MAKING COHERING MASSES. | GRANT | 1915-10-26 | 1915-03-10 | 3226414 | Fair | CONTINENTAL PROCESS CORP | CONTINENTAL PROCESS Corp |
US1008373A | NR | RUNNING-GEAR FOR VEHICLES. | GRANT | 1911-11-14 | 1908-02-10 | 3076684 | Fair | WILLIAM D ELLWANGER | WILLIAM D ELLWANGER |
JPH0982088A | NR | COMPUTER SYSTEM | GRANT | 1997-03-28 | 1995-09-18 | 17032193 | Fair | ||
JPH0773682A | NR | SEMICONDUCTOR MEMORY | GRANT | 1995-03-17 | 1993-06-12 | 15829018 | Fair | ||
JPH07220470A | NR | METHOD AND APPARATUS FOR CONTROLLING REFRESHING OPERATION TO MEMORY | GRANT | 1995-08-18 | 1994-01-27 | 11664945 | Fair | ||
JPH06103758A | NR | DYNAMIC TYPE SEMICONDUCTOR STORAGE DEVICE | GRANT | 1994-04-15 | 1992-09-21 | 17219588 | Fair | ||
JPH056669A | NR | MOS TYPE RAM | GRANT | 1993-01-14 | 1991-11-11 | 17803947 | Fair | ||
JPH0422887A | NR | METHOD FOR CHECKING SEMICONDUCTOR MEMORY CIRCUIT | GRANT | 1992-01-27 | 1990-05-16 | 14957732 | Fair | ||
JPH03272088A | NR | SEMICONDUCTOR STORAGE DEVICE | GRANT | 1991-12-03 | 1990-03-20 | 13438249 | Fair | ||
JPH02192096A | NR | SELECTIVE REFRESH CONTROLLER | GRANT | 1990-07-27 | 1989-01-20 | 11735305 | Fair | ||
JPH01298596A | NR | SEMICONDUCTOR MEMORY | GRANT | 1989-12-01 | 1988-05-26 | 15048301 | Fair | ||
JP2002132577A | NR | DATA PROCESSING SYSTEM | APPLICATION | 2002-05-10 | 1993-10-15 | 27334691 | Fair | ||
JP2001043677A | NR | SEMICONDUCTOR MEMORY | APPLICATION | 2001-02-16 | 1999-08-03 | 16735302 | Fair |